Inventor
TANG BANG-TAI
TW14 patents
⚠️ This page may combine multiple inventors who share the name “TANG BANG-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS10748808B2Aug 18, 2020
Dielectric gap-filling process for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10002933B1Jun 19, 2018
Semiconductor device structure with cap layer with top and bottom portions over gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations83
US11488855B2Nov 1, 2022
Dielectric gap-filling process for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10727069B2Jul 28, 2020
Self-aligned contact and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10361113B2Jul 23, 2019
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10170318B2Jan 1, 2019
Self-aligned contact and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12198974B2Jan 14, 2025
Dielectric gap-filling process for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742238B2Aug 29, 2023
Dielectric gap-filling process for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335562B2May 17, 2022
Self-aligned contact and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937686B2Mar 2, 2021
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10354923B2Jul 16, 2019
Semiconductor device and method for atomic layer deposition of a dielectric over a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10643902B2May 5, 2020
Semiconductor device and method for atomic layer deposition of a dielectric over a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52