P

Inventor

HO JAR-MING

TW26 patents
⚠️ This page may combine multiple inventors who share the name “HO JAR-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NANYA TECHNOLOGY CORP

20 patents
US12131908B2Oct 29, 2024

Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same

NANYA TECHNOLOGY CORP2 citations72
US11742209B2Aug 29, 2023

Method for preparing semiconductor device with air gap in pattern-dense region

NANYA TECHNOLOGY CORP3 citations72
US11309186B2Apr 19, 2022

Semiconductor device with air gap in pattern-dense region and method for forming the same

NANYA TECHNOLOGY CORP4 citations72
US11133319B2Sep 28, 2021

Semiconductor device and method for fabricating the same

NANYA TECHNOLOGY CORP3 citations72
US12500087B2Dec 16, 2025

Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same

NANYA TECHNOLOGY CORP0 citations62
US12249512B2Mar 11, 2025

Semiconductor structure with air gap in pattern- dense region and method of manufacturing the same

NANYA TECHNOLOGY CORP0 citations62
US11978500B2May 7, 2024

Memory device having protrusion of word line

NANYA TECHNOLOGY CORP0 citations62
US11948857B2Apr 2, 2024

Semiconductor device with thermal release layer and method for fabricating the same

NANYA TECHNOLOGY CORP0 citations62
US11776904B2Oct 3, 2023

Semiconductor device with carbon hard mask and method for fabricating the same

NANYA TECHNOLOGY CORP0 citations62
US11574914B2Feb 7, 2023

Method for fabricating semiconductor device including capacitor structure

NANYA TECHNOLOGY CORP0 citations62
US11545431B2Jan 3, 2023

Semiconductor device with carbon hard mask and method for fabricating the same

NANYA TECHNOLOGY CORP0 citations62
US11495516B2Nov 8, 2022

Semiconductor device with thermal release layer and method for fabricating the same

NANYA TECHNOLOGY CORP0 citations62
US7553737B2Jun 30, 2009

Method for fabricating recessed-gate MOS transistor device

NANYA TECHNOLOGY CORP2 citations62
US7510930B2Mar 31, 2009

Method for fabricating recessed gate MOS transistor device

NANYA TECHNOLOGY CORP2 citations59
US7622381B2Nov 24, 2009

Semiconductor structure and the forming method thereof

NANYA TECHNOLOGY CORP0 citations52
US12245419B2Mar 4, 2025

Method for preparing memory device having protrusion of word line

NANYA TECHNOLOGY CORP0 citations51
US11145605B2Oct 12, 2021

Semiconductor device and method for fabricating the same

NANYA TECHNOLOGY CORP0 citations51
US7709318B2May 4, 2010

Method for fabricating a semiconductor device

NANYA TECHNOLOGY CORP0 citations51
US10741750B2Aug 11, 2020

Semiconductor structure and method for manufacturing the same

NANYA TECHNOLOGY CORP0 citations41
US7955927B2Jun 7, 2011

Semiconductor device and fabricating method thereof

NANYA TECHNOLOGY CORP0 citations37

HO JAR-MING

6 patents