Inventor
HO JAR-MING
TW26 patents
⚠️ This page may combine multiple inventors who share the name “HO JAR-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
20 patentsUS12131908B2Oct 29, 2024
Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same
NANYA TECHNOLOGY CORP2 citations72
US11742209B2Aug 29, 2023
Method for preparing semiconductor device with air gap in pattern-dense region
NANYA TECHNOLOGY CORP3 citations72
US11309186B2Apr 19, 2022
Semiconductor device with air gap in pattern-dense region and method for forming the same
NANYA TECHNOLOGY CORP4 citations72
US11133319B2Sep 28, 2021
Semiconductor device and method for fabricating the same
NANYA TECHNOLOGY CORP3 citations72
US12500087B2Dec 16, 2025
Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same
NANYA TECHNOLOGY CORP0 citations62
US12249512B2Mar 11, 2025
Semiconductor structure with air gap in pattern- dense region and method of manufacturing the same
NANYA TECHNOLOGY CORP0 citations62
US11978500B2May 7, 2024
Memory device having protrusion of word line
NANYA TECHNOLOGY CORP0 citations62
US11948857B2Apr 2, 2024
Semiconductor device with thermal release layer and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US11776904B2Oct 3, 2023
Semiconductor device with carbon hard mask and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US11574914B2Feb 7, 2023
Method for fabricating semiconductor device including capacitor structure
NANYA TECHNOLOGY CORP0 citations62
US11545431B2Jan 3, 2023
Semiconductor device with carbon hard mask and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US11495516B2Nov 8, 2022
Semiconductor device with thermal release layer and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US7553737B2Jun 30, 2009
Method for fabricating recessed-gate MOS transistor device
NANYA TECHNOLOGY CORP2 citations62
US7510930B2Mar 31, 2009
Method for fabricating recessed gate MOS transistor device
NANYA TECHNOLOGY CORP2 citations59
US7622381B2Nov 24, 2009
Semiconductor structure and the forming method thereof
NANYA TECHNOLOGY CORP0 citations52
US12245419B2Mar 4, 2025
Method for preparing memory device having protrusion of word line
NANYA TECHNOLOGY CORP0 citations51
US11145605B2Oct 12, 2021
Semiconductor device and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations51
US7709318B2May 4, 2010
Method for fabricating a semiconductor device
NANYA TECHNOLOGY CORP0 citations51
US10741750B2Aug 11, 2020
Semiconductor structure and method for manufacturing the same
NANYA TECHNOLOGY CORP0 citations41
US7955927B2Jun 7, 2011
Semiconductor device and fabricating method thereof
NANYA TECHNOLOGY CORP0 citations37
HO JAR-MING
6 patentsUS8278732B1Oct 2, 2012
Antifuse element for integrated circuit device
HO JAR-MING8 citations83
US8288279B1Oct 16, 2012
Method for forming conductive contact
HO JAR-MING4 citations62
US8178418B1May 15, 2012
Method for fabricating intra-device isolation structure
HO JAR-MING3 citations62
US8487397B2Jul 16, 2013
Method for forming self-aligned contact
HO JAR-MING1 citations51
US8298939B1Oct 30, 2012
Method for forming conductive contact
HO JAR-MING0 citations51
US8093639B2Jan 10, 2012
Method for fabricating a semiconductor device
HO JAR-MING0 citations50