Inventor
GUPTA RAJESH N
IN28 patents
⚠️ This page may combine multiple inventors who share the name “GUPTA RAJESH N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
19 patentsUS10373956B2Aug 6, 2019
Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors
MICRON TECHNOLOGY INC51 citations97
US10607988B2Mar 31, 2020
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
MICRON TECHNOLOGY INC8 citations84
US10381357B2Aug 13, 2019
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
MICRON TECHNOLOGY INC13 citations84
US9761590B1Sep 12, 2017
Passing access line structure in a memory device
MICRON TECHNOLOGY INC8 citations84
US8878271B2Nov 4, 2014
Vertical access device and apparatuses having a body connection line, and related method of operating the same
MICRON TECHNOLOGY INC12 citations84
US9361966B2Jun 7, 2016
Thyristors
MICRON TECHNOLOGY INC6 citations83
US9349737B2May 24, 2016
Passing access line structure in a memory device
MICRON TECHNOLOGY INC4 citations73
US9691465B2Jun 27, 2017
Thyristors, methods of programming thyristors, and methods of forming thyristors
MICRON TECHNOLOGY INC3 citations72
US10242738B2Mar 26, 2019
Resistance variable element methods and apparatuses
MICRON TECHNOLOGY INC1 citations69
US9577092B2Feb 21, 2017
Apparatuses having a vertical memory cell
MICRON TECHNOLOGY INC1 citations63
US12260092B2Mar 25, 2025
Systems and methods for generating logical-to-physical tables for wear-leveling
MICRON TECHNOLOGY INC0 citations62
US11442631B2Sep 13, 2022
Memory operations with consideration for wear leveling
MICRON TECHNOLOGY INC0 citations62
US11302703B2Apr 12, 2022
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
MICRON TECHNOLOGY INC0 citations62
US10886273B2Jan 5, 2021
Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors
MICRON TECHNOLOGY INC0 citations62
US9384814B2Jul 5, 2016
Thyristor memory and methods of operation
MICRON TECHNOLOGY INC2 citations62
US10914780B2Feb 9, 2021
Methods and apparatuses for threshold voltage measurement and related semiconductor devices and systems
MICRON TECHNOLOGY INC0 citations59
US9842649B2Dec 12, 2017
Resistance variable element methods and apparatuses
MICRON TECHNOLOGY INC1 citations58
US9373399B2Jun 21, 2016
Resistance variable element methods and apparatuses
MICRON TECHNOLOGY INC2 citations58
US9520447B2Dec 13, 2016
Memory cells having a common gate terminal
MICRON TECHNOLOGY INC0 citations52
GUPTA RAJESH N
4 patentsUS8797794B2Aug 5, 2014
Thyristor memory and methods of operation
GUPTA RAJESH N5 citations82
US8324656B1Dec 4, 2012
Reduction of electrostatic coupling for a thyristor-based memory cell
GUPTA RAJESH N9 citations79
US8952418B2Feb 10, 2015
Gated bipolar junction transistors
GUPTA RAJESH N1 citations60
US9082494B2Jul 14, 2015
Memory cells having a common gate terminal
GUPTA RAJESH N0 citations51