P

Inventor

GUPTA RAJESH N

IN28 patents
⚠️ This page may combine multiple inventors who share the name “GUPTA RAJESH N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

19 patents
US10373956B2Aug 6, 2019

Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors

MICRON TECHNOLOGY INC51 citations97
US10607988B2Mar 31, 2020

Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

MICRON TECHNOLOGY INC8 citations84
US10381357B2Aug 13, 2019

Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

MICRON TECHNOLOGY INC13 citations84
US9761590B1Sep 12, 2017

Passing access line structure in a memory device

MICRON TECHNOLOGY INC8 citations84
US8878271B2Nov 4, 2014

Vertical access device and apparatuses having a body connection line, and related method of operating the same

MICRON TECHNOLOGY INC12 citations84
US9361966B2Jun 7, 2016

Thyristors

MICRON TECHNOLOGY INC6 citations83
US9349737B2May 24, 2016

Passing access line structure in a memory device

MICRON TECHNOLOGY INC4 citations73
US9691465B2Jun 27, 2017

Thyristors, methods of programming thyristors, and methods of forming thyristors

MICRON TECHNOLOGY INC3 citations72
US10242738B2Mar 26, 2019

Resistance variable element methods and apparatuses

MICRON TECHNOLOGY INC1 citations69
US9577092B2Feb 21, 2017

Apparatuses having a vertical memory cell

MICRON TECHNOLOGY INC1 citations63
US12260092B2Mar 25, 2025

Systems and methods for generating logical-to-physical tables for wear-leveling

MICRON TECHNOLOGY INC0 citations62
US11442631B2Sep 13, 2022

Memory operations with consideration for wear leveling

MICRON TECHNOLOGY INC0 citations62
US11302703B2Apr 12, 2022

Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

MICRON TECHNOLOGY INC0 citations62
US10886273B2Jan 5, 2021

Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors

MICRON TECHNOLOGY INC0 citations62
US9384814B2Jul 5, 2016

Thyristor memory and methods of operation

MICRON TECHNOLOGY INC2 citations62
US10914780B2Feb 9, 2021

Methods and apparatuses for threshold voltage measurement and related semiconductor devices and systems

MICRON TECHNOLOGY INC0 citations59
US9842649B2Dec 12, 2017

Resistance variable element methods and apparatuses

MICRON TECHNOLOGY INC1 citations58
US9373399B2Jun 21, 2016

Resistance variable element methods and apparatuses

MICRON TECHNOLOGY INC2 citations58
US9520447B2Dec 13, 2016

Memory cells having a common gate terminal

MICRON TECHNOLOGY INC0 citations52

GUPTA RAJESH N

4 patents

T RAM SEMICONDUCTOR INC

2 patents

RENSSELAER POLYTECH INST

1 patent

NEMATI FARID

1 patent

TARABBIA MARC LAURENT

1 patent