P

Inventor

EINTHOVEN WILLEM G

US15 patents
⚠️ This page may combine multiple inventors who share the name “EINTHOVEN WILLEM G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GEN INSTRUMENT CORP

10 patents
US4929987AMay 29, 1990

Method for setting the threshold voltage of a power mosfet

GEN INSTRUMENT CORP55 citations92
US4859621AAug 22, 1989

Method for setting the threshold voltage of a vertical power MOSFET

GEN INSTRUMENT CORP27 citations92
US4742377AMay 3, 1988

Schottky barrier device with doped composite guard ring

GEN INSTRUMENT CORP54 citations92
US4638551AJan 27, 1987

Schottky barrier device and method of manufacture

GEN INSTRUMENT CORP41 citations92
US4740477AApr 26, 1988

Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics

GEN INSTRUMENT CORP20 citations80
US4980315ADec 25, 1990

Method of making a passivated P-N junction in mesa semiconductor structure

GEN INSTRUMENT CORP20 citations78
US5010023AApr 23, 1991

Method for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristics

GEN INSTRUMENT CORP10 citations72
US4891685AJan 2, 1990

Rectifying P-N junction having improved breakdown voltage characteristics and method for fabricating same

GEN INSTRUMENT CORP10 citations72
US5166769ANov 24, 1992

Passitvated mesa semiconductor and method for making same

GEN INSTRUMENT CORP12 citations70
US5278095AJan 11, 1994

Method for making passivated mesa semiconductor

GEN INSTRUMENT CORP0 citations48

GEN SEMICONDUCTOR INC

5 patents
US6489660B1Dec 3, 2002

Low-voltage punch-through bi-directional transient-voltage suppression devices

GEN SEMICONDUCTOR INC59 citations93
US5882986AMar 16, 1999

Semiconductor chips having a mesa structure provided by sawing

GEN SEMICONDUCTOR INC48 citations90
US6600204B2Jul 29, 2003

Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same

GEN SEMICONDUCTOR INC8 citations68
US6602769B2Aug 5, 2003

Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same

GEN SEMICONDUCTOR INC5 citations60
US6858510B2Feb 22, 2005

Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same

GEN SEMICONDUCTOR INC4 citations57