Inventor
BRULEY JOHN
US21 patents
⚠️ This page may combine multiple inventors who share the name “BRULEY JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
19 patentsUS7247946B2Jul 24, 2007
On-chip Cu interconnection using 1 to 5 nm thick metal cap
IBM35 citations91
US6878624B1Apr 12, 2005
Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi
IBM20 citations88
US10269714B2Apr 23, 2019
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM4 citations84
US9812530B2Nov 7, 2017
High germanium content silicon germanium fins
IBM6 citations84
US9324843B2Apr 26, 2016
High germanium content silicon germanium fins
IBM8 citations84
US7015469B2Mar 21, 2006
Electron holography method
IBM8 citations74
US6875982B2Apr 5, 2005
Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000X
IBM8 citations74
US11101219B2Aug 24, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10985105B2Apr 20, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US6884641B2Apr 26, 2005
Site-specific methodology for localization and analyzing junction defects in mosfet devices
IBM11 citations73
US12575330B2Mar 10, 2026
Ordered alloy magnetic tunnel junction with simplified seed structure
IBM0 citations62
US12062614B2Aug 13, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US11862567B2Jan 2, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US12048254B2Jul 23, 2024
Sacrificial material facilitating protection of a substrate in a qubit device
IBM0 citations61
US11552237B2Jan 10, 2023
Grain size control of superconducting materials in thin films for Josephson junctions
IBM0 citations61
US11152214B2Oct 19, 2021
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
IBM0 citations52
US10505112B1Dec 10, 2019
CMOS compatible non-filamentary resistive memory stack
IBM0 citations52
US10529832B2Jan 7, 2020
Shallow, abrupt and highly activated tin extension implant junction
IBM0 citations51
US11765985B2Sep 19, 2023
Spurious junction prevention via in-situ ion milling
IBM0 citations50