Inventor

SONG STANLEY SEUNGCHUL

US98 patents

⚠️ This page may combine multiple inventors who share the name “SONG STANLEY SEUNGCHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONG STANLEY SEUNGCHUL

QUALCOMM INC

Semiconductor device having a gap defined therein

Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices

Silicon germanium FinFET formation by Ge condensation

Three-dimensional (3D) integrated circuit device having a backside power delivery network

Integrated circuits including a FinFET and a nanostructure FET

Contact wrap around structure

Device and method to connect gate regions separated using a gate cut

Adjacent device isolation

Self-aligned structure

Conductive cap for metal-gate transistor

Merging lithography processes for gate patterning

Integrated circuit devices and methods

Three-port bit cell having increased width

Metal layers for a three-port bit cell

Dual write wordline memory cell

Grounding dummy gate in scaled layout design

Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabrication

Bulk acoustic wave (BAW) and passive-on-glass (POG) filter co-integration

Semiconductor device having an airgap defined at least partially by a protective structure

Nanowire device with reduced parasitics

Vertically stacked nanowire field effect transistors

Seven-transistor static random-access memory bitcell with reduced read disturbance

Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices

Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device

Standard cell architecture with M1 layer unidirectional routing

Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods

Integrated circuit devices and methods

Middle-of-line integration methods and semiconductor devices

Middle-of-line (MOL) manufactured integrated circuits (ICs) employing local interconnects of metal lines using an elongated via, and related methods

Off-center gate cut

Method for asymmetrical geometrical scaling

Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device

Adjacent device isolation

Shared global read and write word lines

Method of forming finFET having fins of different height

Fin-type semiconductor device

Methods for designing fin-based field effect transistors (FinFETS)

Integrated device comprising a CMOS structure comprising well-less transistors

Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methods

Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)

Silicon germanium read port for a static random access memory register file

Hybrid coloring methodology for multi-pattern technology

Fin-type device system and method

Integrated circuits (ICs) employing front side (FS) back end-of-line (BEOL) (FS-BEOL) input/output (I/O) routing and back side (BS) BEOL (BS-BEOL) power routing for current flow organization, and related methods

Intertwined well connection and decoupling capacitor layout structure for integrated circuits

Three-dimensional (3D) integrated circuit (IC) integration of an embedded chip and a preformed metal routing structure

Complementarily strained FinFET structure

Deep trench capacitors in an inter-layer medium on an interconnect layer of an integrated circuit die and related methods

TEXAS INSTRUMENTS INC

Embedded polysilicon resistor in integrated circuits formed by a replacement gate process

Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length