P

Inventor

FEIL THOMAS

DE34 patents
⚠️ This page may combine multiple inventors who share the name “FEIL THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AUSTRIA AG

20 patents
US10573742B1Feb 25, 2020

Oxygen inserted Si-layers in vertical trench power devices

INFINEON TECHNOLOGIES AUSTRIA AG11 citations85
US10580888B1Mar 3, 2020

Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices

INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US10243051B2Mar 26, 2019

Transistor device with a field electrode that includes two layers

INFINEON TECHNOLOGIES AUSTRIA AG5 citations84
US11158627B2Oct 26, 2021

Electronic circuit with a transistor device and a clamping circuit

INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10957771B2Mar 23, 2021

Transistor device with a field electrode that includes two layers

INFINEON TECHNOLOGIES AUSTRIA AG1 citations73
US10861966B2Dec 8, 2020

Vertical trench power devices with oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10720500B2Jul 21, 2020

Transistor device with a field electrode that includes two layers

INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10236351B2Mar 19, 2019

Power semiconductor device trench having field plate and gate electrode

INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US11031478B2Jun 8, 2021

Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture

INFINEON TECHNOLOGIES AUSTRIA AG2 citations72
US12087717B2Sep 10, 2024

Semiconductor package and methods of manufacturing a semiconductor package

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11581409B2Feb 14, 2023

Transistor device with a field electrode that includes two layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11417732B2Aug 16, 2022

Semiconductor transistor device and method of manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081457B2Aug 3, 2021

Semiconductor package and methods of manufacturing a semiconductor package

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11069639B2Jul 20, 2021

Semiconductor module, electronic component and method of manufacturing a semiconductor module

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10529845B2Jan 7, 2020

Semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG1 citations61
US11908904B2Feb 20, 2024

Planar gate semiconductor device with oxygen-doped Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US12433013B2Sep 30, 2025

Semiconductor die with a vertical transistor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US12389658B2Aug 12, 2025

Semiconductor die with a transistor device and method of manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10868172B2Dec 15, 2020

Vertical power devices with oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10529811B2Jan 7, 2020

Power semiconductor device having a trench with control and field electrode structures

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52

OSRAM GMBH

10 patents

INFINEON TECHNOLOGIES AG

3 patents

PLASTIC OMNIUM LIGHTING SYSTEMS GMBH

1 patent