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Inventor
LAVROVSKAYA NATASHA
US
2 patents
Patents
2 patents
US7663173B1
Feb 16, 2010
Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
NAT SEMICONDUCTOR CORP
12 citations
81
US7808034B1
Oct 5, 2010
Non-volatile memory cell with fully isolated substrate as charge storage
NAT SEMICONDUCTOR CORP
0 citations
44