Inventor
WANG YU-HSIUNG
TW17 patents
⚠️ This page may combine multiple inventors who share the name “WANG YU-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS10535676B2Jan 14, 2020
Inter-digitated capacitor in split-gate flash technology
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US9679909B2Jun 13, 2017
Method for manufacturing a finger trench capacitor with a split-gate flash memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9590059B2Mar 7, 2017
Interdigitated capacitor to integrate with flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9570539B2Feb 14, 2017
Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technology
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11088159B2Aug 10, 2021
Inter-digitated capacitor in flash technology
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10741569B2Aug 11, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12167594B2Dec 10, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11832448B2Nov 28, 2023
Inter-digitated capacitor in flash technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11430799B2Aug 30, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12588482B2Mar 24, 2026
Method for forming semiconductor redistribution structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12376298B2Jul 29, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10297608B2May 21, 2019
Inter-digitated capacitor in split-gate flash technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9691780B2Jun 27, 2017
Interdigitated capacitor in split-gate flash technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
WANG YU-HSIUNG
3 patentsUS8951864B2Feb 10, 2015
Split-gate device and method of fabricating the same
WANG YU-HSIUNG11 citations80
US8253206B2Aug 28, 2012
Method for reshaping silicon surfaces with shallow trench isolation
WANG YU-HSIUNG0 citations49
US8124494B2Feb 28, 2012
Method for reshaping silicon surfaces with shallow trench isolation
WANG YU-HSIUNG0 citations49