Inventor
HSIAO TUNG-SHENG
TW6 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO TUNG-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS10566519B2Feb 18, 2020
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11751485B2Sep 5, 2023
Flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11844286B2Dec 12, 2023
Flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201281B2Dec 14, 2021
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10763426B2Sep 1, 2020
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51