Inventor
HSU YEH
TW13 patents
⚠️ This page may combine multiple inventors who share the name “HSU YEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS9224814B2Dec 29, 2015
Process design to improve transistor variations and performance
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9484460B2Nov 1, 2016
Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10276664B2Apr 30, 2019
Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9728602B2Aug 8, 2017
Variable channel strain of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9716172B2Jul 25, 2017
Semiconductor device having multiple active area layers and its formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9634132B2Apr 25, 2017
Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9620591B2Apr 11, 2017
Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9536746B2Jan 3, 2017
Recess and epitaxial layer to improve transistor performance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10734503B2Aug 4, 2020
Asymmetric semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10026826B2Jul 17, 2018
Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9768297B2Sep 19, 2017
Process design to improve transistor variations and performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9525031B2Dec 20, 2016
Epitaxial channel
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51