Inventor

BARRAUD SYLVAIN

FR22 patents

⚠️ This page may combine multiple inventors who share the name “BARRAUD SYLVAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BARRAUD SYLVAIN

COMMISSARIAT ENERGIE ATOMIQUE

Method for producing a transistor structure with superimposed nanowires and with a surrounding gate

Method for making a semiconductor device with nanowire and aligned external and internal spacers

Method for making a transistor in a stack of superimposed semiconductor layers

Architecture of N and P transistors superposed with canal structure formed of nanowires

Quantum box device comprising dopants located in a thin semiconductor layer

Method for fabricating a nanowire semiconductor transistor having an auto-aligned gate and spacers

Electronic component with multiple quantum islands

Architecture with stacked N and P transistors with a channel structure formed of nanowires

Method of manufacturing an electronic component including multiple quantum dots

3D memory and manufacturing process

Method for manufacturing a transistor with a gate-all-around structure

Nanowire and planar transistors co-integrated on utbox SOI substrate

Nanowire and planar transistors co-integrated on utbox SOI substrate

1TIR memory with a 3D structure

Device comprising wrap-gate transistors and method of manufacturing such a device

Microelectronic device with two field-effect transistors having a common electrode

Microelectronic device with two field-effect transistors

Method of fabricating a field effect transistor

Single-electron transistor and its fabrication method

Three-dimensional structure of memories for in-memory computing

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERG

Method for producing an electronic component with double quantum dots

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Nanowire semiconductor device partially surrounded by a gate