Inventor
GUSTAFSSON ULF
SE22 patents
⚠️ This page may combine multiple inventors who share the name “GUSTAFSSON ULF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ABB RESEARCH LTD
14 patentsUS5914500AJun 22, 1999
Junction termination for SiC Schottky diode
ABB RESEARCH LTD139 citations98
US6091108AJul 18, 2000
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage
ABB RESEARCH LTD115 citations97
US6040237AMar 21, 2000
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge
ABB RESEARCH LTD89 citations97
US6002159ADec 14, 1999
SiC semiconductor device comprising a pn junction with a voltage absorbing edge
ABB RESEARCH LTD54 citations95
US6150671ANov 21, 2000
Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
ABB RESEARCH LTD24 citations92
US5932894AAug 3, 1999
SiC semiconductor device comprising a pn junction
ABB RESEARCH LTD55 citations92
US5801836ASep 1, 1998
Depletion region stopper for PN junction in silicon carbide
ABB RESEARCH LTD47 citations92
US6313488B1Nov 6, 2001
Bipolar transistor having a low doped drift layer of crystalline SiC
ABB RESEARCH LTD36 citations89
US5831287ANov 3, 1998
Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
ABB RESEARCH LTD27 citations88
US5923051AJul 13, 1999
Field controlled semiconductor device of SiC and a method for production thereof
ABB RESEARCH LTD18 citations84
US6201280B1Mar 13, 2001
Transistor of SIC
ABB RESEARCH LTD10 citations74
US5909039AJun 1, 1999
Insulated gate bipolar transistor having a trench
ABB RESEARCH LTD15 citations74
US5773849AJun 30, 1998
Field of the invention
ABB RESEARCH LTD16 citations74
US5763902AJun 9, 1998
Insulated gate bipolar transistor having a trench and a method for production thereof
ABB RESEARCH LTD4 citations63