Inventor
KIM HYUN JOONG
KR71 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUN JOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS10268541B2Apr 23, 2019
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD18 citations94
US10037244B2Jul 31, 2018
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD23 citations94
US6716007B2Apr 6, 2004
Variable capacity rotary compressor
SAMSUNG ELECTRONICS CO LTD32 citations92
US10977118B2Apr 13, 2021
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD5 citations84
US10705908B2Jul 7, 2020
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD7 citations84
US10394648B2Aug 27, 2019
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD4 citations84
US10127974B2Nov 13, 2018
Memory device and memory system performing request-based refresh, and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US10044475B2Aug 7, 2018
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD6 citations84
US9940991B2Apr 10, 2018
Memory device and memory system performing request-based refresh, and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD5 citations84
US9251863B2Feb 2, 2016
Multi channel semiconductor memory device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US11625296B2Apr 11, 2023
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD2 citations73
US11231996B2Jan 25, 2022
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD1 citations73
US11010242B2May 18, 2021
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD2 citations73
US10929225B2Feb 23, 2021
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD2 citations73
US10908993B2Feb 2, 2021
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD1 citations73
US10795764B2Oct 6, 2020
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD1 citations73
US10355833B2Jul 16, 2019
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD3 citations73
US9324458B2Apr 26, 2016
Method and controller for receiving and outputting commands and addresses using a queue
SAMSUNG ELECTRONICS CO LTD5 citations73
US10867690B2Dec 15, 2020
Memory modules and methods of operating memory systems including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10021451B2Jul 10, 2018
Method for outputting audio and electronic device for the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US9859022B2Jan 2, 2018
Memory device having a shareable error correction code cell array
SAMSUNG ELECTRONICS CO LTD4 citations70
US11277278B2Mar 15, 2022
Smart home service server and control method therefor
SAMSUNG ELECTRONICS CO LTD2 citations68
US9747058B2Aug 29, 2017
Semiconductor memory device, memory system including the same, and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations68
US11994948B2May 28, 2024
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD0 citations63
US11593199B2Feb 28, 2023
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD0 citations63
US12242344B2Mar 4, 2025
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD0 citations62
US11239960B2Feb 1, 2022
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD0 citations62
US11818423B2Nov 14, 2023
Method for outputting audio and electronic device for the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US10904612B2Jan 26, 2021
Method for outputting audio and electronic device for the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12233560B2Feb 25, 2025
Automated gas supply system
SAMSUNG ELECTRONICS CO LTD0 citations57
US11904480B2Feb 20, 2024
Automated gas supply system
SAMSUNG ELECTRONICS CO LTD0 citations57
US11409676B2Aug 9, 2022
System on chip, memory device, electronic device comprising the SoC and memory device, and method for storing data in the electronic device
SAMSUNG ELECTRONICS CO LTD0 citations56
SAMSUNG SDI CO LTD
6 patentsUS6777128B2Aug 17, 2004
Secondary battery and fabrication method thereof
SAMSUNG SDI CO LTD27 citations93
US6555263B1Apr 29, 2003
Sealed battery with internal pressure activated safety mechanism
SAMSUNG SDI CO LTD27 citations87
US7390589B2Jun 24, 2008
Safety apparatus for secondary battery and secondary battery having the same
SAMSUNG SDI CO LTD17 citations84
US8956751B2Feb 17, 2015
Battery pack and battery module having the same
SAMSUNG SDI CO LTD10 citations83
US11545702B2Jan 3, 2023
Support plate for protection module and battery module having the same
SAMSUNG SDI CO LTD0 citations63
US8025997B2Sep 27, 2011
Battery pack
SAMSUNG SDI CO LTD3 citations63
KIM HYUN-JOONG
3 patentsUS8717828B2May 6, 2014
Multi channel semiconductor memory device and semiconductor device including the same
KIM HYUN-JOONG17 citations91
US8710655B2Apr 29, 2014
Die packages and systems having the die packages
KIM HYUN-JOONG9 citations82
US9198292B2Nov 24, 2015
Battery pack including circuit board assembly having first circuit board connected to terminals and second circuit board connected to first circuit board
KIM HYUN-JOONG5 citations71
CLARK EQUIPMENT CO
2 patentsCEKO CO LTD
2 patentsCLARIANT CATALYSTS JAPAN KK
2 patentsUS10449510B2Oct 22, 2019
Agent for adsorption of ruthenium from aqueous solution and method for adsorption of ruthenium from aqueous solution
CLARIANT CATALYSTS JAPAN KK1 citations59
US11986795B2May 21, 2024
Organic-halogen-compound-absorbing agent, method for removing organic halogen compound from hydrocarbon gas in which said agent is used, device for absorbing halogen compound in which said method is used, and method for producing hydrocarbon gas
CLARIANT CATALYSTS JAPAN KK0 citations56
SUH DONG JIN
1 patentKOREA INST SCI & TECH
1 patentSK HYNIX INC
1 patentShowing the top 50 of 71 patents by PatentIndex Score.