Inventor
YANG HAICHUN
US15 patents
⚠️ This page may combine multiple inventors who share the name “YANG HAICHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATTSON TECH INC
7 patentsUS10692730B1Jun 23, 2020
Silicon oxide selective dry etch process
MATTSON TECH INC2 citations73
US11791166B2Oct 17, 2023
Selective etch process using hydrofluoric acid and ozone gases
MATTSON TECH INC0 citations62
US11315801B2Apr 26, 2022
Processing of workpieces using ozone gas and hydrogen radicals
MATTSON TECH INC0 citations62
US11251050B2Feb 15, 2022
Silicon oxide selective dry etch process
MATTSON TECH INC0 citations62
US11183397B2Nov 23, 2021
Selective etch process using hydrofluoric acid and ozone gases
MATTSON TECH INC0 citations62
US11164727B2Nov 2, 2021
Processing of workpieces using hydrogen radicals and ozone gas
MATTSON TECH INC0 citations62
US11791181B2Oct 17, 2023
Methods for the treatment of workpieces
MATTSON TECH INC0 citations51
APPLIED MATERIALS INC
6 patentsUS7871926B2Jan 18, 2011
Methods and systems for forming at least one dielectric layer
APPLIED MATERIALS INC77 citations98
US7585762B2Sep 8, 2009
Vapor deposition processes for tantalum carbide nitride materials
APPLIED MATERIALS INC24 citations92
US7780793B2Aug 24, 2010
Passivation layer formation by plasma clean process to reduce native oxide growth
APPLIED MATERIALS INC19 citations84
US7977246B2Jul 12, 2011
Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
APPLIED MATERIALS INC0 citations52
US7989339B2Aug 2, 2011
Vapor deposition processes for tantalum carbide nitride materials
APPLIED MATERIALS INC1 citations51
US7678298B2Mar 16, 2010
Tantalum carbide nitride materials by vapor deposition processes
APPLIED MATERIALS INC0 citations51