Inventor

YANG MICHAEL X

US83 patents

⚠️ This page may combine multiple inventors who share the name “YANG MICHAEL X”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG MICHAEL X

APPLIED MATERIALS INC

Formation of a tantalum-nitride layer

Apparatus and method for plasma assisted deposition

Formation of composite tungsten films

Integration of titanium and titanium nitride layers

Cyclical deposition of a variable content titanium silicon nitride layer

Lid assembly for a processing system to facilitate sequential deposition techniques

Multi-zone resistive heater

Methods for depositing tungsten layers employing atomic layer deposition techniques

Selective deposition of a barrier layer on a metal film

Valve control system for atomic layer deposition chamber

Methods for depositing tungsten layers employing atomic layer deposition techniques

Formation of a tantalum-nitride layer

Integration of titanium and titanium nitride layers

Reliability barrier integration for Cu application

Selective deposition of a barrier layer on a dielectric material

Method of forming a silicon nitride layer on a substrate

Formation of composite tungsten films

Deposition of tungsten films

Method for depositing refractory metal layers employing sequential deposition techniques

Plasma-enhanced cyclic layer deposition process for barrier layers

Deposition of tungsten films from W(CO)6

Anolyte for copper plating

Formation of composite tungsten films

Multi-chemistry plating system

Anolyte for copper plating

Multi-zone resistive heater

Method of forming a film in a chamber and positioning a substitute in a chamber

Contact metallization scheme using a barrier layer over a silicide layer

Valve control system for atomic layer deposition chamber

Modular electrochemical processing system

Plasma-enhanced cyclic layer deposition process for barrier layers

Apparatus and method for plasma assisted deposition

Electrochemical processing cell

Formation of a tantalum-nitride layer

Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition

MATTSON TECH INC

Surface treatment of carbon containing films using organic radicals

Surface treatment of silicon or silicon germanium surfaces using organic radicals

Surface treatment of silicon and carbon containing films by remote plasma with organic precursors

Surface treatment of silicon or silicon germanium surfaces using organic radicals

Integration of materials removal and surface treatment in semiconductor device fabrication

Surface pretreatment process to improve quality of oxide films produced by remote plasma

Processing of workpieces with reactive species generated using alkyl halide

Processing of semiconductors using vaporized solvents

Generation of hydrogen reactive species for processing of workpieces

Method for processing a workpiece

Method for processing a workpiece using a multi-cycle thermal treatment process

Ozone treatment for selective silicon nitride etch over silicon

Spacer etching process

Silicon mandrel etch after native oxide punch-through

CARDIVASCULAR SYSTEMS

Methods and systems for disrupting calcified walls of biological conduits and calcified lesions therein