P

Inventor

WU CHUNG P

US16 patents
⚠️ This page may combine multiple inventors who share the name “WU CHUNG P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RCA CORP

15 patents
US4584026AApr 22, 1986

Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions

RCA CORP91 citations96
US4439245AMar 27, 1984

Electromagnetic radiation annealing of semiconductor material

RCA CORP100 citations96
US4322253AMar 30, 1982

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

RCA CORP132 citations96
US4684964AAug 4, 1987

Silicon light emitting device and a method of making the device

RCA CORP36 citations92
US4392011AJul 5, 1983

Solar cell structure incorporating a novel single crystal silicon material

RCA CORP28 citations92
US4319954AMar 16, 1982

Method of forming polycrystalline silicon lines and vias on a silicon substrate

RCA CORP40 citations92
US4249960AFeb 10, 1981

Laser rounding a sharp semiconductor projection

RCA CORP40 citations92
US4198246AApr 15, 1980

Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film

RCA CORP47 citations92
US4229502AOct 21, 1980

Low-resistivity polycrystalline silicon film

RCA CORP42 citations91
US4595837AJun 17, 1986

Method for preventing arcing in a device during ion-implantation

RCA CORP47 citations90
US4560879ADec 24, 1985

Method and apparatus for implantation of doubly-charged ions

RCA CORP44 citations90
US4230505AOct 28, 1980

Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal

RCA CORP26 citations82
US4525221AJun 25, 1985

Alloying of aluminum metallization

RCA CORP11 citations73
US4502206AMar 5, 1985

Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region

RCA CORP10 citations73
US4472210ASep 18, 1984

Method of making a semiconductor device to improve conductivity of amorphous silicon films

RCA CORP13 citations66

GEN ELECTRIC

1 patent