Inventor
MORIZUKA KOUHEI
JP20 patents
Patents
20 patentsUS5898909AApr 27, 1999
Ultra high frequency radio communication apparatus
TOSHIBA KK86 citations94
US7038250B2May 2, 2006
Semiconductor device suited for a high frequency amplifier
TOSHIBA KK37 citations92
US6448859B2Sep 10, 2002
High frequency power amplifier having a bipolar transistor
TOSHIBA KK42 citations92
US6344775B1Feb 5, 2002
Semiconductor device
TOSHIBA KK34 citations92
US6127716AOct 3, 2000
Heterojunction bipolar transistor and manufacturing method thereof
TOSHIBA KK23 citations92
US5510647AApr 23, 1996
Semiconductor device and method of manufacturing the same
TOSHIBA KK26 citations92
US5331186AJul 19, 1994
Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter
TOSHIBA KK26 citations92
US5124270AJun 23, 1992
Bipolar transistor having external base region
TOSHIBA KK35 citations92
US4679305AJul 14, 1987
Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions
TOSHIBA KK30 citations92
US4933732AJun 12, 1990
Heterojunction bipolar transistor
TOSHIBA KK24 citations91
US7329909B2Feb 12, 2008
Nitride semiconductor device
TOSHIBA KK16 citations84
US6790694B2Sep 14, 2004
High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
TOSHIBA KK12 citations74
US5898200AApr 27, 1999
Microwave integrated circuit
TOSHIBA KK9 citations74
US6051484AApr 18, 2000
Semiconductor device and method of manufacturing thereof
TOSHIBA KK15 citations73
US5930133AJul 27, 1999
Rectifying device for achieving a high power efficiency
TOSHIBA KK13 citations73
US5637909AJun 10, 1997
Semiconductor device and method of manufacturing the same
TOSHIBA KK5 citations73
US6940157B2Sep 6, 2005
High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
TOSHIBA KK2 citations63
US5153692AOct 6, 1992
Semiconductor device
TOSHIBA KK6 citations62
US5053846AOct 1, 1991
Semiconductor bipolar device with phosphorus doping
TOSHIBA KK3 citations62
US5266818ANov 30, 1993
Compound semiconductor device having an emitter contact structure including an Inx Ga1 -x As graded-composition layer
TOSHIBA KK5 citations60