P

Inventor

RANA VIKAS

IN51 patents
⚠️ This page may combine multiple inventors who share the name “RANA VIKAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS INT NV

35 patents
US10050524B1Aug 14, 2018

Circuit for level shifting a clock signal using a voltage multiplier

ST MICROELECTRONICS INT NV17 citations94
US9634562B1Apr 25, 2017

Voltage doubling circuit and charge pump applications for the voltage doubling circuit

ST MICROELECTRONICS INT NV22 citations94
US9755621B1Sep 5, 2017

Single stage cascoded voltage level shifting circuit

ST MICROELECTRONICS INT NV25 citations92
US10811960B2Oct 20, 2020

Voltage multiplier circuit with a common bulk and configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV5 citations84
US10461636B2Oct 29, 2019

Voltage multiplier circuit with a common bulk and configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV5 citations84
US9325323B2Apr 26, 2016

CMOS oscillator having stable frequency with process, temperature, and voltage variation

ST MICROELECTRONICS INT NV7 citations79
US11424676B2Aug 23, 2022

Positive and negative charge pump control

ST MICROELECTRONICS INT NV3 citations73
US11031865B2Jun 8, 2021

Charge pump circuit configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV4 citations73
US10284201B1May 7, 2019

High range positive voltage level shifter using low voltage devices

ST MICROELECTRONICS INT NV5 citations73
US10250133B2Apr 2, 2019

Single-stage CMOS-based voltage quadrupler circuit

ST MICROELECTRONICS INT NV5 citations73
US10211727B1Feb 19, 2019

Circuit for level shifting a clock signal using a voltage multiplier

ST MICROELECTRONICS INT NV4 citations73
US10127990B1Nov 13, 2018

Non-volatile memory (NVM) with dummy rows supporting memory operations

ST MICROELECTRONICS INT NV3 citations73
US9659933B2May 23, 2017

Body bias multiplexer for stress-free transmission of positive and negative supplies

ST MICROELECTRONICS INT NV2 citations73
US9159425B2Oct 13, 2015

Non-volatile memory with reduced sub-threshold leakage during program and erase operations

ST MICROELECTRONICS INT NV4 citations70
US11070128B2Jul 20, 2021

Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory

ST MICROELECTRONICS INT NV4 citations68
US11863066B2Jan 2, 2024

Positive and negative charge pump control

ST MICROELECTRONICS INT NV0 citations62
US11665915B2May 30, 2023

Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof

ST MICROELECTRONICS INT NV0 citations62
US11611275B2Mar 21, 2023

Positive and negative charge pump control

ST MICROELECTRONICS INT NV0 citations62
US11522446B2Dec 6, 2022

Low input supply and low output impedance charge pump circuit configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV0 citations62
US11356018B2Jun 7, 2022

Charge pump circuit configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV0 citations62
US11183924B2Nov 23, 2021

Voltage multiplier circuit with a common bulk and configured for positive and negative voltage generation

ST MICROELECTRONICS INT NV0 citations62
US10658364B2May 19, 2020

Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof

ST MICROELECTRONICS INT NV1 citations62
US11205462B2Dec 21, 2021

Circuit for generating and trimming phases for memory cell read operations

ST MICROELECTRONICS INT NV0 citations61
US12087368B2Sep 10, 2024

Circuit and method for on-chip leakage detection and compensation for memories

ST MICROELECTRONICS INT NV0 citations59
US12033715B2Jul 9, 2024

Memory circuit arrangement for accurate and secure read

ST MICROELECTRONICS INT NV1 citations59
US11551731B2Jan 10, 2023

Memory circuit arrangement for accurate and secure read

ST MICROELECTRONICS INT NV0 citations59
US11258358B2Feb 22, 2022

Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory

ST MICROELECTRONICS INT NV0 citations58
US10333397B2Jun 25, 2019

Multi-stage charge pump circuit operating to simultaneously generate both a positive voltage and a negative voltage

ST MICROELECTRONICS INT NV1 citations58
US12094542B2Sep 17, 2024

Device and method to generate bias voltages in non-volatile memory

ST MICROELECTRONICS INT NV0 citations54
US11563373B2Jan 24, 2023

Circuit and method for controlled discharge of a high (positive or negative) voltage charge pump

ST MICROELECTRONICS INT NV0 citations54
US11935607B2Mar 19, 2024

Circuit and method to detect word-line leakage and process defects in non-volatile memory array

ST MICROELECTRONICS INT NV0 citations52
US11764673B2Sep 19, 2023

NMOS-based negative charge pump circuit

ST MICROELECTRONICS INT NV0 citations52
US9129685B2Sep 8, 2015

Word-line driver for memory

ST MICROELECTRONICS INT NV0 citations52
US11908528B2Feb 20, 2024

Selectively configurable charge pump

ST MICROELECTRONICS INT NV0 citations48
US11881280B2Jan 23, 2024

Circuit and method for constant slew rate in high voltage charge pumps

ST MICROELECTRONICS INT NV0 citations47

ST MICROELECTRONICS SRL

10 patents

RANA VIKAS

2 patents

ST MICROELECTRONICS PVT LTD

2 patents

COUNCIL SCIENT IND RES

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.