P

Inventor

RAMSBEY MARK

US44 patents
⚠️ This page may combine multiple inventors who share the name “RAMSBEY MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

25 patents
US6680509B1Jan 20, 2004

Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory

ADVANCED MICRO DEVICES INC80 citations97
US6440797B1Aug 27, 2002

Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory

ADVANCED MICRO DEVICES INC104 citations97
US5907781AMay 25, 1999

Process for fabricating an integrated circuit with a self-aligned contact

ADVANCED MICRO DEVICES INC59 citations96
US6252276B1Jun 26, 2001

Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide

ADVANCED MICRO DEVICES INC16 citations93
US5972751AOct 26, 1999

Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device

ADVANCED MICRO DEVICES INC24 citations93
US6436766B1Aug 20, 2002

Process for fabricating high density memory cells using a polysilicon hard mask

ADVANCED MICRO DEVICES INC36 citations92
US6399446B1Jun 4, 2002

Process for fabricating high density memory cells using a metallic hard mask

ADVANCED MICRO DEVICES INC21 citations92
US6362051B1Mar 26, 2002

Method of forming ONO flash memory devices using low energy nitrogen implantation

ADVANCED MICRO DEVICES INC22 citations92
US6117730ASep 12, 2000

Integrated method by using high temperature oxide for top oxide and periphery gate oxide

ADVANCED MICRO DEVICES INC52 citations92
US6770938B1Aug 3, 2004

Diode fabrication for ESD/EOS protection

ADVANCED MICRO DEVICES INC40 citations90
US6433383B1Aug 13, 2002

Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device

ADVANCED MICRO DEVICES INC50 citations87
US7060554B2Jun 13, 2006

PECVD silicon-rich oxide layer for reduced UV charging

ADVANCED MICRO DEVICES INC12 citations84
US6989319B1Jan 24, 2006

Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices

ADVANCED MICRO DEVICES INC11 citations84
US6855608B1Feb 15, 2005

Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance

ADVANCED MICRO DEVICES INC17 citations84
US6579778B1Jun 17, 2003

Source bus formation for a flash memory using silicide

ADVANCED MICRO DEVICES INC15 citations84
US5869385AFeb 9, 1999

Selectively oxidized field oxide region

ADVANCED MICRO DEVICES INC17 citations84
US6403420B1Jun 11, 2002

Nitrogen implant after bit-line formation for ONO flash memory devices

ADVANCED MICRO DEVICES INC9 citations74
US6395654B1May 28, 2002

Method of forming ONO flash memory devices using rapid thermal oxidation

ADVANCED MICRO DEVICES INC12 citations74
US6410443B1Jun 25, 2002

Method for removing semiconductor ARC using ARC CMP buffing

ADVANCED MICRO DEVICES INC12 citations72
US6034394AMar 7, 2000

Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices

ADVANCED MICRO DEVICES INC7 citations72
US6251717B1Jun 26, 2001

Viable memory cell formed using rapid thermal annealing

ADVANCED MICRO DEVICES INC12 citations69
US6989320B2Jan 24, 2006

Bitline implant utilizing dual poly

ADVANCED MICRO DEVICES INC5 citations63
US6444530B1Sep 3, 2002

Process for fabricating an integrated circuit with a self-aligned contact

ADVANCED MICRO DEVICES INC2 citations63
US6274433B1Aug 14, 2001

Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices

ADVANCED MICRO DEVICES INC2 citations61
US6486029B1Nov 26, 2002

Integration of an ion implant hard mask structure into a process for fabricating high density memory cells

ADVANCED MICRO DEVICES INC6 citations60

CYPRESS SEMICONDUCTOR CORP

10 patents

SPANSION LLC

6 patents

FASL LLC

2 patents

NANTERO INC

1 patent