Inventor
RAMSBEY MARK
US44 patents
⚠️ This page may combine multiple inventors who share the name “RAMSBEY MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
25 patentsUS6680509B1Jan 20, 2004
Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
ADVANCED MICRO DEVICES INC80 citations97
US6440797B1Aug 27, 2002
Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
ADVANCED MICRO DEVICES INC104 citations97
US5907781AMay 25, 1999
Process for fabricating an integrated circuit with a self-aligned contact
ADVANCED MICRO DEVICES INC59 citations96
US6252276B1Jun 26, 2001
Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide
ADVANCED MICRO DEVICES INC16 citations93
US5972751AOct 26, 1999
Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device
ADVANCED MICRO DEVICES INC24 citations93
US6436766B1Aug 20, 2002
Process for fabricating high density memory cells using a polysilicon hard mask
ADVANCED MICRO DEVICES INC36 citations92
US6399446B1Jun 4, 2002
Process for fabricating high density memory cells using a metallic hard mask
ADVANCED MICRO DEVICES INC21 citations92
US6362051B1Mar 26, 2002
Method of forming ONO flash memory devices using low energy nitrogen implantation
ADVANCED MICRO DEVICES INC22 citations92
US6117730ASep 12, 2000
Integrated method by using high temperature oxide for top oxide and periphery gate oxide
ADVANCED MICRO DEVICES INC52 citations92
US6770938B1Aug 3, 2004
Diode fabrication for ESD/EOS protection
ADVANCED MICRO DEVICES INC40 citations90
US6433383B1Aug 13, 2002
Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device
ADVANCED MICRO DEVICES INC50 citations87
US7060554B2Jun 13, 2006
PECVD silicon-rich oxide layer for reduced UV charging
ADVANCED MICRO DEVICES INC12 citations84
US6989319B1Jan 24, 2006
Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices
ADVANCED MICRO DEVICES INC11 citations84
US6855608B1Feb 15, 2005
Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance
ADVANCED MICRO DEVICES INC17 citations84
US6579778B1Jun 17, 2003
Source bus formation for a flash memory using silicide
ADVANCED MICRO DEVICES INC15 citations84
US5869385AFeb 9, 1999
Selectively oxidized field oxide region
ADVANCED MICRO DEVICES INC17 citations84
US6403420B1Jun 11, 2002
Nitrogen implant after bit-line formation for ONO flash memory devices
ADVANCED MICRO DEVICES INC9 citations74
US6395654B1May 28, 2002
Method of forming ONO flash memory devices using rapid thermal oxidation
ADVANCED MICRO DEVICES INC12 citations74
US6410443B1Jun 25, 2002
Method for removing semiconductor ARC using ARC CMP buffing
ADVANCED MICRO DEVICES INC12 citations72
US6034394AMar 7, 2000
Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices
ADVANCED MICRO DEVICES INC7 citations72
US6251717B1Jun 26, 2001
Viable memory cell formed using rapid thermal annealing
ADVANCED MICRO DEVICES INC12 citations69
US6989320B2Jan 24, 2006
Bitline implant utilizing dual poly
ADVANCED MICRO DEVICES INC5 citations63
US6444530B1Sep 3, 2002
Process for fabricating an integrated circuit with a self-aligned contact
ADVANCED MICRO DEVICES INC2 citations63
US6274433B1Aug 14, 2001
Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices
ADVANCED MICRO DEVICES INC2 citations61
US6486029B1Nov 26, 2002
Integration of an ion implant hard mask structure into a process for fabricating high density memory cells
ADVANCED MICRO DEVICES INC6 citations60
CYPRESS SEMICONDUCTOR CORP
10 patentsUS10014380B2Jul 3, 2018
Memory first process flow and device
CYPRESS SEMICONDUCTOR CORP4 citations84
US9917166B2Mar 13, 2018
Memory first process flow and device
CYPRESS SEMICONDUCTOR CORP3 citations73
US11450680B2Sep 20, 2022
Split gate charge trapping memory cells having different select gate and memory gate heights
CYPRESS SEMICONDUCTOR CORP0 citations63
US10818761B2Oct 27, 2020
Memory first process flow and device
CYPRESS SEMICONDUCTOR CORP0 citations52
US10777568B2Sep 15, 2020
Split gate charge trapping memory cells having different select gate and memory gate heights
CYPRESS SEMICONDUCTOR CORP0 citations52
US10403731B2Sep 3, 2019
Memory first process flow and device
CYPRESS SEMICONDUCTOR CORP0 citations52
US10141393B1Nov 27, 2018
Three dimensional capacitor
CYPRESS SEMICONDUCTOR CORP1 citations52
US9590079B2Mar 7, 2017
Use disposable gate cap to form transistors, and split gate charge trapping memory cells
CYPRESS SEMICONDUCTOR CORP0 citations52
US9368644B2Jun 14, 2016
Gate formation memory by planarization
CYPRESS SEMICONDUCTOR CORP0 citations52
US9922833B2Mar 20, 2018
Charge trapping split gate embedded flash memory and associated methods
CYPRESS SEMICONDUCTOR CORP0 citations42
SPANSION LLC
6 patentsUS7163860B1Jan 16, 2007
Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device
SPANSION LLC25 citations92
US9368606B2Jun 14, 2016
Memory first process flow and device
SPANSION LLC9 citations84
US7176113B1Feb 13, 2007
LDC implant for mirrorbit to improve Vt roll-off and form sharper junction
SPANSION LLC12 citations83
US9209197B2Dec 8, 2015
Memory gate landing pad made from dummy features
SPANSION LLC5 citations73
US7507661B2Mar 24, 2009
Method of forming narrowly spaced flash memory contact openings and lithography masks
SPANSION LLC6 citations62
US8816438B2Aug 26, 2014
Process charging protection for split gate charge trapping flash
SPANSION LLC0 citations42
FASL LLC
2 patentsUS7033957B1Apr 25, 2006
ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices
FASL LLC62 citations96
US6958511B1Oct 25, 2005
Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen
FASL LLC52 citations92