Inventor
MCCANN PAUL DAMIEN
IE2 patents
Patents
2 patentsUS6955988B2Oct 18, 2005
Method of forming a cavity and SOI in a semiconductor substrate
ANALOG DEVICES INC19 citations87
US7153757B2Dec 26, 2006
Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure
ANALOG DEVICES INC11 citations79