Inventor
FISCHETTI MASSIMO V
US7 patents
⚠️ This page may combine multiple inventors who share the name “FISCHETTI MASSIMO V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
6 patentsUS6864520B2Mar 8, 2005
Germanium field effect transistor and method of fabricating the same
IBM46 citations90
US7314790B2Jan 1, 2008
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
IBM1 citations62
US7161169B2Jan 9, 2007
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
IBM2 citations62
US7968946B2Jun 28, 2011
Higher performance CMOS on (110) wafers
IBM2 citations61
US7943486B2May 17, 2011
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
IBM0 citations51
US7462525B2Dec 9, 2008
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
IBM0 citations51