Inventor
KAYES BRENDAN M
US27 patents
⚠️ This page may combine multiple inventors who share the name “KAYES BRENDAN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ALTA DEVICES INC
11 patentsUS9768329B1Sep 19, 2017
Multi-junction optoelectronic device
ALTA DEVICES INC16 citations82
US9537025B1Jan 3, 2017
Texturing a layer in an optoelectronic device for improved angle randomization of light
ALTA DEVICES INC8 citations81
US9502594B2Nov 22, 2016
Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
ALTA DEVICES INC6 citations81
US10916676B2Feb 9, 2021
Optoelectronic devices including heterojunction and intermediate layer
ALTA DEVICES INC0 citations62
US10615304B2Apr 7, 2020
Optoelectronic device with dielectric layer and method of manufacture
ALTA DEVICES INC1 citations62
US10586884B2Mar 10, 2020
Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication
ALTA DEVICES INC1 citations62
US10797197B2Oct 6, 2020
Thin-film, flexible optoelectronic devices incorporating a single lattice-matched dilute nitride junction and methods of fabrication
ALTA DEVICES INC0 citations52
US9954131B2Apr 24, 2018
Optoelectronic devices including heterojunction and intermediate layer
ALTA DEVICES INC0 citations52
US10008628B2Jun 26, 2018
Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
ALTA DEVICES INC0 citations49
US10873001B2Dec 22, 2020
Methods of manufacturing optoelectronic devices using different growth substrates
ALTA DEVICES INC0 citations48
US10811557B2Oct 20, 2020
Growth structure under a release layer for manufacturing of optoelectronic devices
ALTA DEVICES INC0 citations47
UTICA LEASECO LLC
10 patentsUS11695088B2Jul 4, 2023
Self-bypass diode function for gallium arsenide photovoltaic devices
UTICA LEASECO LLC0 citations62
US11271133B2Mar 8, 2022
Multi-junction optoelectronic device with group IV semiconductor as a bottom junction
UTICA LEASECO LLC1 citations62
US11211506B2Dec 28, 2021
Self-bypass diode function for gallium arsenide photovoltaic devices
UTICA LEASECO LLC0 citations62
US11942566B2Mar 26, 2024
Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
UTICA LEASECO LLC0 citations58
US11038080B2Jun 15, 2021
Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
UTICA LEASECO LLC0 citations58
US11442090B2Sep 13, 2022
Systems and methods for measuring electrical characteristics of a material using a non-destructive multi-point probe
UTICA LEASECO LLC0 citations51
US11271128B2Mar 8, 2022
Multi-junction optoelectronic device
UTICA LEASECO LLC0 citations50
US11121272B2Sep 14, 2021
Self-bypass diode function for gallium arsenide photovoltaic devices
UTICA LEASECO LLC0 citations48
US11075313B2Jul 27, 2021
Optoelectronic devices manufactured using different growth substrates
UTICA LEASECO LLC0 citations47
US11199501B2Dec 14, 2021
Methods and systems for identifying features
UTICA LEASECO LLC0 citations40
NIE HUI
3 patentsUS9178099B2Nov 3, 2015
Methods for forming optoelectronic devices including heterojunction
NIE HUI7 citations83
US9136418B2Sep 15, 2015
Optoelectronic devices including heterojunction and intermediate layer
NIE HUI11 citations83
US9716196B2Jul 25, 2017
Self-bypass diode function for gallium arsenide photovoltaic devices
NIE HUI2 citations72