P

Inventor

MOE CRAIG

US24 patents
⚠️ This page may combine multiple inventors who share the name “MOE CRAIG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AKOUSTIS INC

11 patents
US12289087B2Apr 29, 2025

RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer

AKOUSTIS INC0 citations62
US11581866B2Feb 14, 2023

RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

AKOUSTIS INC0 citations62
US11411168B2Aug 9, 2022

Methods of forming group III piezoelectric thin films via sputtering

AKOUSTIS INC1 citations62
US12102010B2Sep 24, 2024

Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices

AKOUSTIS INC0 citations59
US11832521B2Nov 28, 2023

Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers

AKOUSTIS INC0 citations59
US11245382B2Feb 8, 2022

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

AKOUSTIS INC0 citations59
US11856858B2Dec 26, 2023

Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films

AKOUSTIS INC1 citations58
US11895920B2Feb 6, 2024

Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material

AKOUSTIS INC0 citations49
US11411169B2Aug 9, 2022

Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material

AKOUSTIS INC0 citations49
US10523180B2Dec 31, 2019

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

AKOUSTIS INC0 citations49
US11618968B2Apr 4, 2023

Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers

AKOUSTIS INC0 citations48

MOE CRAIG

5 patents

CHEN JIANFENG

2 patents

GRANDUSKY JAMES R

2 patents

AKOUSTIS TECH CORP

2 patents

CRYSTAL IS INC

1 patent

TOITA MASATO

1 patent