Inventor
MOE CRAIG
US24 patents
⚠️ This page may combine multiple inventors who share the name “MOE CRAIG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AKOUSTIS INC
11 patentsUS12289087B2Apr 29, 2025
RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer
AKOUSTIS INC0 citations62
US11581866B2Feb 14, 2023
RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same
AKOUSTIS INC0 citations62
US11411168B2Aug 9, 2022
Methods of forming group III piezoelectric thin films via sputtering
AKOUSTIS INC1 citations62
US12102010B2Sep 24, 2024
Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
AKOUSTIS INC0 citations59
US11832521B2Nov 28, 2023
Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
AKOUSTIS INC0 citations59
US11245382B2Feb 8, 2022
Method and structure for single crystal acoustic resonator devices using thermal recrystallization
AKOUSTIS INC0 citations59
US11856858B2Dec 26, 2023
Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
AKOUSTIS INC1 citations58
US11895920B2Feb 6, 2024
Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
AKOUSTIS INC0 citations49
US11411169B2Aug 9, 2022
Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
AKOUSTIS INC0 citations49
US10523180B2Dec 31, 2019
Method and structure for single crystal acoustic resonator devices using thermal recrystallization
AKOUSTIS INC0 citations49
US11618968B2Apr 4, 2023
Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
AKOUSTIS INC0 citations48
MOE CRAIG
5 patentsUS9680057B2Jun 13, 2017
Ultraviolet light-emitting devices incorporating two-dimensional hole gases
MOE CRAIG5 citations83
US10211368B2Feb 19, 2019
Ultraviolet light-emitting devices incorporating graded layers and compositional offsets
MOE CRAIG2 citations72
US10211369B2Feb 19, 2019
Ultraviolet light-emitting devices incorporating two-dimensional hole gases
MOE CRAIG2 citations72
US9806227B2Oct 31, 2017
Ultraviolet light-emitting devices incorporating graded layers and compositional offsets
MOE CRAIG1 citations61
US10700237B2Jun 30, 2020
Ultraviolet light-emitting devices incorporating graded layers and compositional offsets
MOE CRAIG0 citations51
CHEN JIANFENG
2 patentsGRANDUSKY JAMES R
2 patentsAKOUSTIS TECH CORP
2 patentsUS12597906B2Apr 7, 2026
Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy
AKOUSTIS TECH CORP0 citations59
US12549150B2Feb 10, 2026
Methods of forming epitaxial AlScN resonators with superlattice structures including AlGaN interlayers and varied scandium concentrations for stress control and related structures
AKOUSTIS TECH CORP0 citations58