Inventor

DAI YU-TENG

TW32 patents

Patents

32 patents

US12424488B2Sep 23, 2025

Dual etch-stop layer structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75

US11942364B2Mar 26, 2024

Selective deposition of a protective layer to reduce interconnect structure critical dimensions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11805658B2Oct 31, 2023

Magnetic random access memory and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11798910B2Oct 24, 2023

Self-aligned interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11521896B2Dec 6, 2022

Selective deposition of a protective layer to reduce interconnect structure critical dimensions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11362030B2Jun 14, 2022

Sidewall spacer structure enclosing conductive wire sidewalls to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11302641B2Apr 12, 2022

Structure and formation method of semiconductor device with carbon-containing conductive structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12266565B2Apr 1, 2025

Integrated chip with an etch-stop layer forming a cavity

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12243775B2Mar 4, 2025

Double patterning approach by direct metal etch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12178051B2Dec 24, 2024

Magnetic random access memory and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12125795B2Oct 22, 2024

Integrated chip with inter-wire cavities

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12094823B2Sep 17, 2024

Interconnection structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11972975B2Apr 30, 2024

Semiconductor device structure having air gap and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11923293B2Mar 5, 2024

Barrier structure on interconnect wire to increase processing window for overlying via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11854965B2Dec 26, 2023

Sidewall spacer structure enclosing conductive wire sidewalls to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11842966B2Dec 12, 2023

Integrated chip with inter-wire cavities

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11842924B2Dec 12, 2023

Dual etch-stop layer structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11837546B2Dec 5, 2023

Self-aligned cavity strucutre

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11798840B2Oct 24, 2023

Self-assembled dielectric on metal RIE lines to increase reliability

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11756884B2Sep 12, 2023

Interconnection structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11688782B2Jun 27, 2023

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11652054B2May 16, 2023

Dielectric on wire structure to increase processing window for overlying via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11569127B2Jan 31, 2023

Double patterning approach by direct metal etch

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11488926B2Nov 1, 2022

Self-aligned interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11482447B2Oct 25, 2022

Method of forming an integrated chip having a cavity between metal features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12300611B2May 13, 2025

Interconnect conductive structure comprising two conductive materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

DAI YU-TENG

Patents

Dual etch-stop layer structure

Selective deposition of a protective layer to reduce interconnect structure critical dimensions

Magnetic random access memory and manufacturing method thereof

Self-aligned interconnect structure

Selective deposition of a protective layer to reduce interconnect structure critical dimensions

Sidewall spacer structure enclosing conductive wire sidewalls to increase reliability

Self-aligned cavity strucutre

Semiconductor structure

Interconnection structure and methods of forming the same

Self-assembled dielectric on metal rie lines to increase reliability

Self-aligned interconnect structure

Dielectric on wire structure to increase processing window for overlying via

Structure and formation method of semiconductor device with carbon-containing conductive structure

Integrated chip with an etch-stop layer forming a cavity

Double patterning approach by direct metal etch

Magnetic random access memory and manufacturing method thereof

Integrated chip with inter-wire cavities

Interconnection structure and methods of forming the same

Semiconductor device structure having air gap and method for forming the same

Barrier structure on interconnect wire to increase processing window for overlying via

Sidewall spacer structure enclosing conductive wire sidewalls to increase reliability

Integrated chip with inter-wire cavities

Dual etch-stop layer structure

Self-aligned cavity strucutre

Self-assembled dielectric on metal RIE lines to increase reliability

Interconnection structure and methods of forming the same

Semiconductor structure and method for forming the same

Dielectric on wire structure to increase processing window for overlying via

Double patterning approach by direct metal etch

Self-aligned interconnect structure

Method of forming an integrated chip having a cavity between metal features

Interconnect conductive structure comprising two conductive materials