Inventor
HSUEH HSIU-WEN
TW27 patents
⚠️ This page may combine multiple inventors who share the name “HSUEH HSIU-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11217482B2Jan 4, 2022
Method for forming semiconductor device with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10515852B2Dec 24, 2019
Structure and formation method of semiconductor device with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10985011B2Apr 20, 2021
Structure and formation method of semiconductor device with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11694926B2Jul 4, 2023
Barrier free interface between beol interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11551968B2Jan 10, 2023
Inter-wire cavity for low capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11798848B2Oct 24, 2023
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362035B2Jun 14, 2022
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11342222B2May 24, 2022
Self-aligned scheme for semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12347770B2Jul 1, 2025
One-time-programmable device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12550721B2Feb 10, 2026
Inter-wire cavity for low capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362235B2Jul 15, 2025
Barrier free interface between BEOL interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12341101B2Jun 24, 2025
Method for forming a semiconductor structure by diffusing manganese from a seed layer to a barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119262B2Oct 15, 2024
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040178B2Jul 16, 2024
Method for manufacturing semiconductor structure with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670501B2Jun 6, 2023
Semiconductor device structure with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12476146B2Nov 18, 2025
Self-aligned scheme for semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12387977B2Aug 12, 2025
Self-aligned scheme for semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12368103B2Jul 22, 2025
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11901228B2Feb 13, 2024
Self-aligned scheme for semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11830770B2Nov 28, 2023
Self-aligned scheme for semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742291B2Aug 29, 2023
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11410926B2Aug 9, 2022
E-fuse enhancement by underlayer layout design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12512363B2Dec 30, 2025
Forming interconnect structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12417955B2Sep 16, 2025
Thermal sensor device by back end of line metal resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12243816B2Mar 4, 2025
Semiconductor structure havbing an enhanced E-fuse and a method making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US9922162B2Mar 20, 2018
Resistive capacitance determination method for multiple-patterning-multiple spacer integrated circuit layout
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41