Inventor
LEE YA-LIEN
TW48 patents
⚠️ This page may combine multiple inventors who share the name “LEE YA-LIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
44 patentsUS10312098B2Jun 4, 2019
Method of forming an interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10163644B2Dec 25, 2018
Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US8962473B2Feb 24, 2015
Method of forming hybrid diffusion barrier layer and semiconductor device thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11961761B2Apr 16, 2024
Mitigating pattern collapse
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867800B2Dec 15, 2020
Method of forming an interconnect structure having a carbon-containing barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10354914B2Jul 16, 2019
Global dielectric and barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10079176B2Sep 18, 2018
Method of using a barrier-seed tool for forming fine pitched metal interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10043706B2Aug 7, 2018
Mitigating pattern collapse
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9659856B2May 23, 2017
Two step metallization formation
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11676898B2Jun 13, 2023
Diffusion barrier for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11362035B2Jun 14, 2022
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11398406B2Jul 26, 2022
Selective deposition of metal barrier in damascene processes
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11908697B2Feb 20, 2024
Interconnect structure having a carbon-containing barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11851749B2Dec 26, 2023
Semiconductor device, method and machine of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527476B2Dec 13, 2022
Interconnect structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527411B2Dec 13, 2022
Interconnect structure having a carbon-containing barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11345991B2May 31, 2022
Semiconductor device, method and machine of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183424B2Nov 23, 2021
Barrier layer formation for conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177168B2Nov 16, 2021
Device and method for reducing contact resistance of a metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145542B2Oct 12, 2021
Global dielectric and barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11062909B2Jul 13, 2021
Interconnect structure having a carbon-containing barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043416B2Jun 22, 2021
Gradient atomic layer deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043413B2Jun 22, 2021
Barrier layer formation for conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10950495B2Mar 16, 2021
Mitigating pattern collapse
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9892963B2Feb 13, 2018
Device and method for reducing contact resistance of a metal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12368103B2Jul 22, 2025
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12354958B2Jul 8, 2025
Semiconductor devices and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11742291B2Aug 29, 2023
Diffusion barrier layer for conductive via to decrease contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12315809B2May 27, 2025
Via for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12068194B2Aug 20, 2024
Selective deposition of metal barrier in damascene processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11837500B2Dec 5, 2023
Selective deposition of metal barrier in damascene processes and the structures formed thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11810857B2Nov 7, 2023
Via for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12581925B2Mar 17, 2026
Selective metal cap in an interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10529575B2Jan 7, 2020
Interconnect structure having a carbon-containing barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941199B2Apr 10, 2018
Two step metallization formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9812397B2Nov 7, 2017
Method of forming hybrid diffusion barrier layer and semiconductor device thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711398B2Jul 18, 2017
Global dielectric and barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9396992B2Jul 19, 2016
Method of using a barrier-seed tool for forming fine-pitched metal interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10741442B2Aug 11, 2020
Barrier layer formation for conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10672652B2Jun 2, 2020
Gradient atomic layer deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276431B2Apr 30, 2019
Device and method for reducing contact resistance of a metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10163719B2Dec 25, 2018
Method of forming self-alignment contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10050116B2Aug 14, 2018
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9818834B2Nov 14, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9209072B2Dec 8, 2015
Global dielectric and barrier layer
TAIWAN SEMICONDUCTOR MFG4 citations84
US9214383B2Dec 15, 2015
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG3 citations62
US9159666B2Oct 13, 2015
Device and method for reducing contact resistance of a metal
TAIWAN SEMICONDUCTOR MFG1 citations62