Inventor
KIZUKI HIROTAKA
JP21 patents
Patents
21 patentsUS5796127AAug 18, 1998
High electron mobility transistor
MITSUBISHI ELECTRIC CORP224 citations99
US5782979AJul 21, 1998
Substrate holder for MOCVD
MITSUBISHI ELECTRIC CORP584 citations98
US7307490B2Dec 11, 2007
High frequency switch device
MITSUBISHI ELECTRIC CORP68 citations97
US5459747AOct 17, 1995
Semiconductor optical devices
MITSUBISHI ELECTRIC CORP53 citations96
US6358316B1Mar 19, 2002
Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure
MITSUBISHI ELECTRIC CORP45 citations92
US5991322ANov 23, 1999
Semiconductor optical device
MITSUBISHI ELECTRIC CORP37 citations92
US5948161ASep 7, 1999
Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface
MITSUBISHI ELECTRIC CORP51 citations92
US5882952AMar 16, 1999
Semiconductor device including quantum wells or quantum wires and method of making semiconductor device
MITSUBISHI ELECTRIC CORP21 citations92
US5835516ANov 10, 1998
Semiconductor laser device and method of fabricating semiconductor laser device
MITSUBISHI ELECTRIC CORP24 citations92
US5714006AFeb 3, 1998
Method of growing compound semiconductor layer
MITSUBISHI ELECTRIC CORP36 citations92
US5608749AMar 4, 1997
Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
MITSUBISHI ELECTRIC CORP34 citations92
US5539763AJul 23, 1996
Semiconductor lasers and methods for fabricating semiconductor lasers
MITSUBISHI ELECTRIC CORP40 citations92
US5426658AJun 20, 1995
Semiconductor laser including ridge confining buffer layer
MITSUBISHI ELECTRIC CORP27 citations92
US5316967AMay 31, 1994
Method for producing semiconductor device
MITSUBISHI ELECTRIC CORP24 citations92
US5602414AFeb 11, 1997
Infrared detector having active regions and isolating regions formed of CdHgTe
MITSUBISHI ELECTRIC CORP26 citations90
US6096617AAug 1, 2000
Method of manufacturing a carbon-doped compound semiconductor layer
MITSUBISHI ELECTRIC CORP16 citations84
US5805628ASep 8, 1998
Semiconductor laser
MITSUBISHI ELECTRIC CORP8 citations74
US5679962AOct 21, 1997
Semiconductor device and a single electron device
MITSUBISHI ELECTRIC CORP12 citations74
US6506618B1Jan 14, 2003
Method of forming a GaInNAs layer
MITSUBISHI ELECTRIC CORP7 citations73
US5541950AJul 30, 1996
Semiconductor laser including groove having variable dimensions
MITSUBISHI ELECTRIC CORP17 citations73
US5389798AFeb 14, 1995
High-speed semiconductor device with graded collector barrier
MITSUBISHI ELECTRIC CORP14 citations73