Inventor
YANG HYUCKSOO
US6 patents
⚠️ This page may combine multiple inventors who share the name “YANG HYUCKSOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
4 patentsUS9024368B1May 5, 2015
Fin-type transistor structures with extended embedded stress elements and fabrication methods
GLOBALFOUNDRIES INC29 citations92
US9324841B2Apr 26, 2016
Methods for preventing oxidation damage during FinFET fabrication
GLOBALFOUNDRIES INC3 citations72
US9236312B2Jan 12, 2016
Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device
GLOBALFOUNDRIES INC0 citations51
US9356147B2May 31, 2016
FinFET spacer etch for eSiGe improvement
GLOBALFOUNDRIES INC0 citations50