Inventor
HWANG YOUNG-CHUL
KR3 patents
Patents
3 patentsUS10256342B2Apr 9, 2019
Methods of manufacturing fin field effect transistors (FinFETs) comprising reduced gate thicknesses overlying deep trenches
SAMSUNG ELECTRONICS CO LTD7 citations80
US9818879B2Nov 14, 2017
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD2 citations69
US9966446B2May 8, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations37