Inventor
WANG XIANGNING
CN13 patents
Patents
13 patentsUS11950418B2Apr 2, 2024
Method and structure for forming stairs in three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD1 citations69
US12532513B2Jan 20, 2026
Method of forming top select gate trenches
YANGTZE MEMORY TECH CO LTD0 citations61
US12469714B2Nov 11, 2025
Gateline mask design for removing sacrificial gateline polysilicon within stair step area
YANGTZE MEMORY TECH CO LTD0 citations61
US12021126B2Jun 25, 2024
Method of forming top select gate trenches
YANGTZE MEMORY TECH CO LTD0 citations61
US11711921B2Jul 25, 2023
Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US12495555B2Dec 9, 2025
Method and structure for forming stairs in three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD0 citations59
US12310025B2May 20, 2025
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations59
US11950419B2Apr 2, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations59
US11552097B2Jan 10, 2023
Method and structure for forming stairs in three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD0 citations59
US12557621B2Feb 17, 2026
Three-dimensional memory and its fabrication method
YANGTZE MEMORY TECH CO LTD0 citations49
US12193229B2Jan 7, 2025
Semiconductor device fabrication
YANGTZE MEMORY TECH CO LTD0 citations49
US12148655B2Nov 19, 2024
Methods for forming stairs in three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD0 citations49
US12048153B2Jul 23, 2024
Vertical memory devices
YANGTZE MEMORY TECH CO LTD0 citations49