Inventor
JIANG JYH-MIN
TW6 patents
⚠️ This page may combine multiple inventors who share the name “JIANG JYH-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
5 patentsUS6323074B1Nov 27, 2001
High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain
TAIWAN SEMICONDUCTOR MFG44 citations92
US6590262B2Jul 8, 2003
High voltage ESD protection device with very low snapback voltage
TAIWAN SEMICONDUCTOR MFG7 citations73
US6242313B1Jun 5, 2001
Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage
TAIWAN SEMICONDUCTOR MFG12 citations71
US6396126B1May 28, 2002
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG2 citations61
US6291304B1Sep 18, 2001
Method of fabricating a high voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG5 citations61