P

Inventor

FUNAYAMA KOTA

JP38 patents
⚠️ This page may combine multiple inventors who share the name “FUNAYAMA KOTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES LLC

15 patents
US9754963B1Sep 5, 2017

Multi-tier memory stack structure containing two types of support pillar structures

SANDISK TECHNOLOGIES LLC107 citations98
US10224240B1Mar 5, 2019

Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control

SANDISK TECHNOLOGIES LLC45 citations94
US9929174B1Mar 27, 2018

Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof

SANDISK TECHNOLOGIES LLC38 citations94
US9978766B1May 22, 2018

Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof

SANDISK TECHNOLOGIES LLC45 citations93
US9780034B1Oct 3, 2017

Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

SANDISK TECHNOLOGIES LLC38 citations93
US10600802B2Mar 24, 2020

Multi-tier memory device with rounded top part of joint structure and methods of making the same

SANDISK TECHNOLOGIES LLC14 citations86
US10658377B2May 19, 2020

Three-dimensional memory device with reduced etch damage to memory films and methods of making the same

SANDISK TECHNOLOGIES LLC8 citations84
US9859363B2Jan 2, 2018

Self-aligned isolation dielectric structures for a three-dimensional memory device

SANDISK TECHNOLOGIES LLC15 citations82
US11367733B1Jun 21, 2022

Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same

SANDISK TECHNOLOGIES LLC4 citations73
US9941297B2Apr 10, 2018

Vertical resistor in 3D memory device with two-tier stack

SANDISK TECHNOLOGIES LLC3 citations73
US11444101B2Sep 13, 2022

Spacerless source contact layer replacement process and three-dimensional memory device formed by the process

SANDISK TECHNOLOGIES LLC2 citations71
US12394718B2Aug 19, 2025

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

SANDISK TECHNOLOGIES LLC0 citations52
US12133388B2Oct 29, 2024

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

SANDISK TECHNOLOGIES LLC0 citations52
US9613971B2Apr 4, 2017

Select gates with central open areas

SANDISK TECHNOLOGIES LLC0 citations51
US11756877B2Sep 12, 2023

Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same

SANDISK TECHNOLOGIES LLC0 citations50

RENESAS ELECTRONICS CORP

7 patents

RENESAS TECH CORP

5 patents

FUNAYAMA KOTA

4 patents

HITACHI LTD

2 patents

SANDISK TECHNOLOGIES INC

1 patent

HITACHI ULSI SYS CO LTD

1 patent

HOMMA TAKURO

1 patent

WESTERN DIGITAL TECH INC

1 patent

TOBA KOICHI

1 patent