Inventor
FUNAYAMA KOTA
JP38 patents
⚠️ This page may combine multiple inventors who share the name “FUNAYAMA KOTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
15 patentsUS9754963B1Sep 5, 2017
Multi-tier memory stack structure containing two types of support pillar structures
SANDISK TECHNOLOGIES LLC107 citations98
US10224240B1Mar 5, 2019
Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control
SANDISK TECHNOLOGIES LLC45 citations94
US9929174B1Mar 27, 2018
Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof
SANDISK TECHNOLOGIES LLC38 citations94
US9978766B1May 22, 2018
Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof
SANDISK TECHNOLOGIES LLC45 citations93
US9780034B1Oct 3, 2017
Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
SANDISK TECHNOLOGIES LLC38 citations93
US10600802B2Mar 24, 2020
Multi-tier memory device with rounded top part of joint structure and methods of making the same
SANDISK TECHNOLOGIES LLC14 citations86
US10658377B2May 19, 2020
Three-dimensional memory device with reduced etch damage to memory films and methods of making the same
SANDISK TECHNOLOGIES LLC8 citations84
US9859363B2Jan 2, 2018
Self-aligned isolation dielectric structures for a three-dimensional memory device
SANDISK TECHNOLOGIES LLC15 citations82
US11367733B1Jun 21, 2022
Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same
SANDISK TECHNOLOGIES LLC4 citations73
US9941297B2Apr 10, 2018
Vertical resistor in 3D memory device with two-tier stack
SANDISK TECHNOLOGIES LLC3 citations73
US11444101B2Sep 13, 2022
Spacerless source contact layer replacement process and three-dimensional memory device formed by the process
SANDISK TECHNOLOGIES LLC2 citations71
US12394718B2Aug 19, 2025
Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US12133388B2Oct 29, 2024
Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US9613971B2Apr 4, 2017
Select gates with central open areas
SANDISK TECHNOLOGIES LLC0 citations51
US11756877B2Sep 12, 2023
Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations50
RENESAS ELECTRONICS CORP
7 patentsUS9443991B2Sep 13, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP5 citations84
US8853036B2Oct 7, 2014
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP7 citations84
US9093546B2Jul 28, 2015
Method of manufacturing semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP5 citations69
US9379127B2Jun 28, 2016
Semiconductor device and manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP2 citations63
US9324883B2Apr 26, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP2 citations63
US9356110B2May 31, 2016
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP2 citations61
US9564540B2Feb 7, 2017
Method of manufacturing semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP0 citations48
RENESAS TECH CORP
5 patentsUS6670642B2Dec 30, 2003
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP83 citations98
US7098478B2Aug 29, 2006
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP33 citations93
US7348230B2Mar 25, 2008
Manufacturing method of semiconductor device
RENESAS TECH CORP38 citations91
US6943373B2Sep 13, 2005
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP9 citations74
US7666728B2Feb 23, 2010
Manufacturing method of semiconductor device
RENESAS TECH CORP0 citations51
FUNAYAMA KOTA
4 patentsUS8633530B2Jan 21, 2014
Semiconductor device and method of manufacturing the same
FUNAYAMA KOTA5 citations83
US8569144B2Oct 29, 2013
Method of manufacturing semiconductor integrated circuit device
FUNAYAMA KOTA3 citations62
US8133795B2Mar 13, 2012
Method of manufacturing semiconductor integrated circuit device
FUNAYAMA KOTA3 citations62
US9093319B2Jul 28, 2015
Semiconductor device and manufacturing method thereof
FUNAYAMA KOTA1 citations51