Inventor
ZHU ZHONGWEI
US4 patents
Patents
4 patentsUS9911660B2Mar 6, 2018
Methods for forming germanium and silicon germanium nanowire devices
LAM RES CORP3 citations69
US11923189B2Mar 5, 2024
Capping layer for a hafnium oxide-based ferroelectric material
LAM RES CORP0 citations58
US11923404B2Mar 5, 2024
Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers
LAM RES CORP0 citations58
US12256645B2Mar 18, 2025
Chemical etch nonvolatile materials for MRAM patterning
LAM RES CORP0 citations47