Inventor
ZORINSKY ELDON J
US11 patents
Patents
11 patentsUS5316957AMay 31, 1994
Method of forming a recessed contact bipolar transistor
TEXAS INSTRUMENTS INC21 citations92
US5075241ADec 24, 1991
Method of forming a recessed contact bipolar transistor and field effect device
TEXAS INSTRUMENTS INC25 citations92
US4985744AJan 15, 1991
Method for forming a recessed contact bipolar transistor and field effect transistor
TEXAS INSTRUMENTS INC27 citations92
US4897703AJan 30, 1990
Recessed contact bipolar transistor and method
TEXAS INSTRUMENTS INC25 citations92
US4891103AJan 2, 1990
Anadization system with remote voltage sensing and active feedback control capabilities
TEXAS INSTRUMENTS INC37 citations92
US4628591ADec 16, 1986
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
TEXAS INSTRUMENTS INC43 citations92
US4982263AJan 1, 1991
Anodizable strain layer for SOI semiconductor structures
TEXAS INSTRUMENTS INC23 citations91
US4849370AJul 18, 1989
Anodizable strain layer for SOI semiconductor structures
TEXAS INSTRUMENTS INC25 citations91
US4810667AMar 7, 1989
Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer
TEXAS INSTRUMENTS INC34 citations91
US5019525AMay 28, 1991
Method for forming a horizontal self-aligned transistor
TEXAS INSTRUMENTS INC8 citations73
US4897698AJan 30, 1990
Horizontal structure thin film transistor
TEXAS INSTRUMENTS INC16 citations68