Inventor

UETA YOSHIHIRO

JP60 patents

⚠️ This page may combine multiple inventors who share the name “UETA YOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UETA YOSHIHIRO

SHARP KK

III-N compound semiconductor device

Layered structure including a nitride compound semiconductor film and method for making the same

Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Nitride compound semiconductor light emitting device and method for producing the same

Nitride group compound semiconductor laser device and method for producing the same

Nitride semiconductor light emitting device

Light-emitting device containing quantum dots and method for manufacturing same

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Nitride compound semiconductor light emitting device and method for producing the same

Semiconductor laser device having an inn contact layer and a method of fabricating the same

Light-emitting element, light-emitting device, and device for producing light-emitting element

Light-emitting element and light-emitting device

Method of manufacturing nitride-composite semiconductor laser element, with disclocation control

Nitride compound semiconductor light emitting device and method for producing the same

Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same

Light-emitting element and method for producing light-emitting element

Quantum dot, self-luminous device, and method for manufacturing quantum dot

Light-emitting element and light-emitting device

Display-device manufacturing method and display device

Light-emitting element and display device

Electroluminescent element and electroluminescent device each having electron transport layer including n-type semiconductor particles and insulating polymer

Display device including metal oxide nanoparticles for uniform and efficient lighting and method for producing same

Light-emitting element and method for manufacturing same

Light-emitting device including a light-emitting diode and a protective diode and display device

Light-emitting element having a hole transport layer containing LaNiO.sub.3 for luminous efficiency

Light-emitting element for restraining degradation of electrical and optical properties

Light emitting element and display device including an electron transport layer containing at least one of RH and IR

Light-emitting element and display device

Light-emitting element, light-emitting device, and method for manufacturing light-emitting element

Light-emitting element and light-emitting device

Light-emitting device and method for controlling light-emitting device

Light emitting element, light emitting device, and apparatus for producing light emitting element

Display device having an optical adjustment element switchable between light changing states

Light-emitting device with high electron injection efficiency

Aluminum nitride-based semiconductor deep ultraviolet light-emitting device

Method for manufacturing display device, and display device

Photoelectric conversion element, display device, and method of manufacturing photoelectric conversion element

Light-emitting element and display device, and production method for light-emitting element

Light emitting device and method for manufacturing light emitting device

Light-emitting element and display device

Light-emitting device and driving method for light-emitting device

Light-emitting element including luminous quantum dots and non-luminous quantum dots, display device including light-emitting element thereof, and method of manufacturing light- emitting element thereof

Light-emitting device

Nitride semiconductor light-emitting device and method for producing the same

TAKEOKA TADASHI

Nitride semiconductor light-emitting device and method for producing the same

UETA YOSHIHIRO

Semiconductor device having aluminum nitride layer with void formed therein

TSUDA YUHZOH

Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method