Inventor · disambiguated record
Chii-Ming Wu
Also filed as: WU CHII-MING · WU CHII-MING M · WU CHII-MING MORRIS · WU CHII-MING W
106 granted patents·18 pending applications·1,189 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD64TAIWAN SEMICONDUCTOR MFG42HUANG YU-LIEN3WU CHII-MING3LIN CHEN-TUNG2
Top patents by PatentIndex Score
124 records- 0199US7235482B2Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technologyTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 26, 2007·532 cites·23 claims
- 0298US10157780B2Method of forming a device having a doping layer and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·26 cites·20 claims
- 0396US11721794B2Method for manufacturing reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
- 0496US10748798B1Wireless camera wafer for vacuum chamber diagnosticsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·15 cites·20 claims
- 0595US9997633B2Semiconductor devices, FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·11 cites·17 claims
- 0695US6406956B1Poly resistor structure for damascene metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·117 cites·19 claims
- 0794US10910560B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·6 cites·20 claims
- 0894US8536658B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 17, 2013·12 cites·20 claims
- 0994US8298925B2Mechanisms for forming ultra shallow junctionWU CHII-MING·Filed 2010·Granted Oct 30, 2012·20 cites·20 claims
- 1093US11152568B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·3 cites·20 claims
- 1193US9620503B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·9 cites·20 claims
- 1292US9653594B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·7 cites·20 claims
- 1391US11479849B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 25, 2022·2 cites·20 claims
- 1491US11152455B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·4 cites·20 claims
- 1591US8735266B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·8 cites·20 claims
- 1690US11594593B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
- 1790US2025344418A1Method to reduce breakdown failure in a mim capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1889US10157770B2Semiconductor device having isolation structures with different thickness and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1989US10020401B2Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
- 2088US7432559B2Silicide formation on SiGeTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 7, 2008·14 cites·20 claims
- 2188US7223673B2Method of manufacturing semiconductor device with crack prevention ringTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 29, 2007·40 cites·19 claims
- 2288US2025311646A1Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2387US12414484B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2487US11257997B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·2 cites·20 claims
- 2587US8569139B2Method of manufacturing strained source/drain structuresNIEH CHUN-FENG·Filed 2010·Granted Oct 29, 2013·8 cites·20 claims
- 2686US11527717B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 2786US8354734B2Semiconductor device with crack prevention ringTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 15, 2013·10 cites·17 claims
- 2886US2024373763A1Top-electrode barrier layer for rramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2985US12114582B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 3085US7396767B2Semiconductor structure including silicide regions and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 8, 2008·33 cites·30 claims
- 3184US12102019B2Data storage structure for improving memory cell reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 3284US8791528B2Methods of manufacturing metal-silicide featuresLIN CHEN-TUNG·Filed 2010·Granted Jul 29, 2014·7 cites·20 claims
- 3384US8592915B2Doped oxide for shallow trench isolation (STI)HUANG YU-LIEN·Filed 2011·Granted Nov 26, 2013·5 cites·18 claims
- 3484US8383513B2Asymmetric rapid thermal annealing to reduce pattern effectTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 26, 2013·5 cites·20 claims
- 3583US12486566B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 3683US10177043B1Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·20 claims
- 3783US6803309B2Method for depositing an adhesion/barrier layer to improve adhesion and contact resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 12, 2004·35 cites·17 claims
- 3882US12408354B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 3982US7015126B2Method of forming silicided gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·28 cites·19 claims
- 4082US2025081864A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4181US11637240B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·1 cites·20 claims
- 4281US7625801B2Silicide formation with a pre-amorphous implantTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 1, 2009·7 cites·11 claims
- 4380US12178147B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 4480US9570557B2Tilt implantation for STI formation in FinFET structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·3 cites·20 claims
- 4580US9184088B2Method of making a shallow trench isolation (STI) structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·3 cites·20 claims
- 4680US7586176B2Semiconductor device with crack prevention ringTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 8, 2009·7 cites·17 claims
- 4780US2025105137A1Mim capacitor with a symmetrical capacitor insulator structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4879US12239035B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 4979US11963468B2Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 5079US11923235B2Method for forming semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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