Inventor
LEE CHANGSEUNG
KR34 patents
Patents
34 patentsUS9658186B2May 23, 2017
Device including vertically aligned two-dimensional material
SAMSUNG ELECTRONICS CO LTD14 citations79
US10976472B2Apr 13, 2021
Meta-optical device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11818899B2Nov 14, 2023
Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11194153B2Dec 7, 2021
Phase shift device including metal-dielectric composite structure
SAMSUNG ELECTRONICS CO LTD2 citations71
US10392518B2Aug 27, 2019
Paste material, wiring member formed from the paste material, and electronic device including the wiring member
SAMSUNG ELECTRONICS CO LTD3 citations71
US9970906B2May 15, 2018
Apparatus for analyzing active material of secondary battery and method of analyzing active material using the same
SAMSUNG ELECTRONICS CO LTD6 citations70
US11133179B2Sep 28, 2021
Thin-film structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations68
US12268105B2Apr 1, 2025
Semiconductor apparatus
SAMSUNG ELECTRONICS CO LTD0 citations62
US11808918B2Nov 7, 2023
Meta-surface optical element and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11744167B2Aug 29, 2023
Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11677036B2Jun 13, 2023
Meta optical devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11329174B2May 10, 2022
Meta optical devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11947238B2Apr 2, 2024
Multilayer thin-film structure and phase shifting device using the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11137661B2Oct 5, 2021
Multilayer thin-film structure and phase shifting device using the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12563744B2Feb 24, 2026
Memory device and memory apparatus comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12471292B2Nov 11, 2025
Phase-change memory structure and phase-change memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12426275B2Sep 23, 2025
Switching device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12254922B2Mar 18, 2025
Memory device including switching material and phase change material
SAMSUNG ELECTRONICS CO LTD0 citations60
US12101942B2Sep 24, 2024
Semiconductor device including chalcogen compound and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11693237B2Jul 4, 2023
Phase shift device including metal-dielectric composite structure
SAMSUNG ELECTRONICS CO LTD0 citations60
US10665637B2May 26, 2020
Complementary metal oxide semiconductor image sensor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US10438715B2Oct 8, 2019
Nanostructure, method of preparing the same, and panel units comprising the nanostructure
SAMSUNG ELECTRONICS CO LTD1 citations60
US12588218B2Mar 24, 2026
Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12140734B2Nov 12, 2024
Optical thin film for meta-surface and meta-optical device including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12063793B2Aug 13, 2024
Chalcogen compound and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD1 citations59
US11262606B2Mar 1, 2022
Nonreciprocal optical transmission device and optical apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US10670891B2Jun 2, 2020
Nonreciprocal optical transmission device and optical apparatus including the same
SAMSUNG ELECTRONICS CO LTD1 citations59
US11898244B2Feb 13, 2024
Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11158838B2Oct 26, 2021
Flexible organic-inorganic passivation layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9595401B1Mar 14, 2017
Method of fabricating graphene nano-mesh
SAMSUNG ELECTRONICS CO LTD0 citations52
US12414309B2Sep 9, 2025
Memory device including phase-change material
SAMSUNG ELECTRONICS CO LTD0 citations51
US12543512B2Feb 3, 2026
Semiconductor device and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US10541178B2Jan 21, 2020
Method and device for evaluating quality of thin film layer
SAMSUNG ELECTRONICS CO LTD0 citations49
US10124438B2Nov 13, 2018
Method of patterning graphene holes and method of fabricating graphene transparent electrode by using pulse laser
SAMSUNG ELECTRONICS CO LTD0 citations34