P

Inventor

AHN DONGHO

KR28 patents
⚠️ This page may combine multiple inventors who share the name “AHN DONGHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US9985204B2May 29, 2018

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11818899B2Nov 14, 2023

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US11581367B2Feb 14, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations70
US12268105B2Apr 1, 2025

Semiconductor apparatus

SAMSUNG ELECTRONICS CO LTD0 citations62
US11744167B2Aug 29, 2023

Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer

SAMSUNG ELECTRONICS CO LTD0 citations62
US12324166B2Jun 3, 2025

Resistive memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US10892410B2Jan 12, 2021

Variable resistance memory devices and methods of manufacturing variable resistance memory devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US12477748B2Nov 18, 2025

Variable resistance memory device and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US12471292B2Nov 11, 2025

Phase-change memory structure and phase-change memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US12426275B2Sep 23, 2025

Switching device and memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US12254922B2Mar 18, 2025

Memory device including switching material and phase change material

SAMSUNG ELECTRONICS CO LTD0 citations60
US12101942B2Sep 24, 2024

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US12588218B2Mar 24, 2026

Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12185647B2Dec 31, 2024

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12063793B2Aug 13, 2024

Chalcogen compound and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations59
US11616197B2Mar 28, 2023

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD1 citations59
US12431351B2Sep 30, 2025

Method of forming germanium antimony tellurium film

SAMSUNG ELECTRONICS CO LTD0 citations53
US12414309B2Sep 9, 2025

Memory device including phase-change material

SAMSUNG ELECTRONICS CO LTD0 citations51
US11037992B2Jun 15, 2021

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12232429B2Feb 18, 2025

Semiconductor device including data storage material pattern

SAMSUNG ELECTRONICS CO LTD0 citations50
US12543512B2Feb 3, 2026

Semiconductor device and semiconductor apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US12457754B2Oct 28, 2025

Nonvolatile memory device and operating method of the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US12396379B2Aug 19, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations48
US12426264B2Sep 23, 2025

Semiconductor devices and data storage systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations47

OH GYUHWAN

3 patents

PARK YOUNG-LIM

1 patent