Inventor
AHN DONGHO
KR28 patents
⚠️ This page may combine multiple inventors who share the name “AHN DONGHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS9985204B2May 29, 2018
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11818899B2Nov 14, 2023
Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11581367B2Feb 14, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations70
US12268105B2Apr 1, 2025
Semiconductor apparatus
SAMSUNG ELECTRONICS CO LTD0 citations62
US11744167B2Aug 29, 2023
Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US12324166B2Jun 3, 2025
Resistive memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US10892410B2Jan 12, 2021
Variable resistance memory devices and methods of manufacturing variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US12477748B2Nov 18, 2025
Variable resistance memory device and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12471292B2Nov 11, 2025
Phase-change memory structure and phase-change memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12426275B2Sep 23, 2025
Switching device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12254922B2Mar 18, 2025
Memory device including switching material and phase change material
SAMSUNG ELECTRONICS CO LTD0 citations60
US12101942B2Sep 24, 2024
Semiconductor device including chalcogen compound and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US12588218B2Mar 24, 2026
Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12185647B2Dec 31, 2024
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12063793B2Aug 13, 2024
Chalcogen compound and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD1 citations59
US11616197B2Mar 28, 2023
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD1 citations59
US12431351B2Sep 30, 2025
Method of forming germanium antimony tellurium film
SAMSUNG ELECTRONICS CO LTD0 citations53
US12414309B2Sep 9, 2025
Memory device including phase-change material
SAMSUNG ELECTRONICS CO LTD0 citations51
US11037992B2Jun 15, 2021
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12232429B2Feb 18, 2025
Semiconductor device including data storage material pattern
SAMSUNG ELECTRONICS CO LTD0 citations50
US12543512B2Feb 3, 2026
Semiconductor device and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12457754B2Oct 28, 2025
Nonvolatile memory device and operating method of the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12396379B2Aug 19, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations48
US12426264B2Sep 23, 2025
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
OH GYUHWAN
3 patentsUS8278206B2Oct 2, 2012
Variable resistance memory device and methods of forming the same
OH GYUHWAN12 citations82
US8558348B2Oct 15, 2013
Variable resistance memory device and methods of forming the same
OH GYUHWAN5 citations71
US8501623B2Aug 6, 2013
Method of forming a semiconductor device having a metal silicide and alloy layers as electrode
OH GYUHWAN6 citations70