Inventor
PURDES ANDREW J
US18 patents
Patents
18 patentsUS5082522AJan 21, 1992
Method for forming patterned diamond thin films
TEXAS INSTRUMENTS INC52 citations96
US5006203AApr 9, 1991
Diamond growth method
TEXAS INSTRUMENTS INC69 citations96
US4830984AMay 16, 1989
Method for heteroepitaxial growth using tensioning layer on rear substrate surface
TEXAS INSTRUMENTS INC70 citations96
US4512283AApr 23, 1985
Plasma reactor sidewall shield
TEXAS INSTRUMENTS INC92 citations96
US6139483AOct 31, 2000
Method of forming lateral resonant tunneling devices
TEXAS INSTRUMENTS INC27 citations92
US5935641AAug 10, 1999
Method of forming a piezoelectric layer with improved texture
TEXAS INSTRUMENTS INC22 citations92
US5556462ASep 17, 1996
Growth method by repeatedly measuring flux in MBE chamber
TEXAS INSTRUMENTS INC26 citations92
US5114696AMay 19, 1992
Diamond growth method
TEXAS INSTRUMENTS INC40 citations92
US4878989ANov 7, 1989
Chemical beam epitaxy system
TEXAS INSTRUMENTS INC28 citations92
US4681653AJul 21, 1987
Planarized dielectric deposited using plasma enhanced chemical vapor deposition
TEXAS INSTRUMENTS INC51 citations92
US4513021AApr 23, 1985
Plasma reactor with reduced chamber wall deposition
TEXAS INSTRUMENTS INC54 citations92
US4450042AMay 22, 1984
Plasma etch chemistry for anisotropic etching of silicon
TEXAS INSTRUMENTS INC31 citations92
US5399521AMar 21, 1995
Method of semiconductor layer growth by MBE
TEXAS INSTRUMENTS INC18 citations82
US4521275AJun 4, 1985
Plasma etch chemistry for anisotropic etching of silicon
TEXAS INSTRUMENTS INC21 citations82
US5170329ADec 8, 1992
Stress free chip mount and method of manufacture
TEXAS INSTRUMENTS INC10 citations73
US4699085AOct 13, 1987
Chemical beam epitaxy system
TEXAS INSTRUMENTS INC6 citations62
US5175019ADec 29, 1992
Method for depositing a thin film
TEXAS INSTRUMENTS INC5 citations54
US5952059ASep 14, 1999
Forming a piezoelectric layer with improved texture
TEXAS INSTRUMENTS INC1 citations52