Inventor
NANJO TAKUMA
JP8 patents
Patents
8 patentsUS8035130B2Oct 11, 2011
Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
MITSUBISHI ELECTRIC CORP16 citations82
US12142675B2Nov 12, 2024
Semiconductor device and method of manufacturing the same
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US11282950B2Mar 22, 2022
Method for manufacturing semiconductor device
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US10784350B2Sep 22, 2020
Semiconductor device and method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP1 citations56
US8987125B2Mar 24, 2015
Method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP1 citations49
US9893210B2Feb 13, 2018
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations48
US11107895B2Aug 31, 2021
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations47
US10756189B2Aug 25, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations37