Inventor
XU WENXIANG
CN14 patents
Patents
14 patentsUS11271007B2Mar 8, 2022
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11257831B2Feb 22, 2022
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11211394B2Dec 28, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD3 citations73
US12052871B2Jul 30, 2024
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US12035523B2Jul 9, 2024
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11805650B2Oct 31, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11785772B2Oct 10, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11653495B2May 16, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11437398B2Sep 6, 2022
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11127757B2Sep 21, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11101286B2Aug 24, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11792980B2Oct 17, 2023
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11411014B2Aug 9, 2022
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11195853B2Dec 7, 2021
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61