Inventor
WIDMANN DIETRICH
28 patents
⚠️ This page may combine multiple inventors who share the name “WIDMANN DIETRICH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
17 patentsUS4356622ANov 2, 1982
Method of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formation
SIEMENS AG72 citations96
US6319787B1Nov 20, 2001
Method for forming a high surface area trench capacitor
SIEMENS AG33 citations92
US4382826AMay 10, 1983
Method of making MIS-field effect transistor having a short channel length
SIEMENS AG41 citations92
US4291321ASep 22, 1981
MIS-field effect transistor having a short channel length and method of making the same
SIEMENS AG31 citations92
US4562640AJan 7, 1986
Method of manufacturing stable, low resistance contacts in integrated semiconductor circuits
SIEMENS AG32 citations91
US5869860AFeb 9, 1999
Ferroelectric memory device and method for producing the device
SIEMENS AG16 citations82
US4047975ASep 13, 1977
Process for the production of a bipolar integrated circuit
SIEMENS AG25 citations82
US3953877AApr 27, 1976
Semiconductors covered by a polymeric heat resistant relief structure
SIEMENS AG23 citations81
US6022786AFeb 8, 2000
Method for manufacturing a capacitor for a semiconductor arrangement
SIEMENS AG15 citations74
US5989972ANov 23, 1999
Capacitor in a semiconductor configuration and process for its production
SIEMENS AG13 citations74
US4352237AOct 5, 1982
Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes
SIEMENS AG8 citations74
US4313256AFeb 2, 1982
Method of producing integrated MOS circuits via silicon gate technology
SIEMENS AG15 citations74
US4211888AJul 8, 1980
Arrangement with several thermal elements in series connection
SIEMENS AG16 citations74
US4108717AAug 22, 1978
Process for the production of fine structures consisting of a vapor-deposited material on a base
SIEMENS AG13 citations74
US4090068AMay 16, 1978
Process for the automatic adjustment of semiconductor wafers
SIEMENS AG7 citations72
US4351100ASep 28, 1982
Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes
SIEMENS AG2 citations63
US4268563AMay 19, 1981
Radiation mask for producing structural configurations in photo-sensitive resists by X-ray exposure
SIEMENS AG3 citations63
INFINEON TECHNOLOGIES AG
8 patentsUS6686098B2Feb 3, 2004
Lithography method and lithography mask
INFINEON TECHNOLOGIES AG19 citations88
US6515319B2Feb 4, 2003
Field-effect-controlled transistor and method for fabricating the transistor
INFINEON TECHNOLOGIES AG17 citations82
US6232169B1May 15, 2001
Method for producing a capacitor
INFINEON TECHNOLOGIES AG13 citations74
US6124156ASep 26, 2000
Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions
INFINEON TECHNOLOGIES AG11 citations74
US6472767B1Oct 29, 2002
Static random access memory (SRAM)
INFINEON TECHNOLOGIES AG4 citations63
US6468812B2Oct 22, 2002
Method for producing a semiconductor memory device with a multiplicity of memory cells
INFINEON TECHNOLOGIES AG2 citations63
US6635388B1Oct 21, 2003
Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask
INFINEON TECHNOLOGIES AG4 citations61
US6404034B1Jun 11, 2002
CMOS circuit with all-around dielectrically insulated source-drain regions
INFINEON TECHNOLOGIES AG1 citations52