Inventor
SAWADA SHIZUO
JP32 patents
⚠️ This page may combine multiple inventors who share the name “SAWADA SHIZUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
29 patentsUS6252281B1Jun 26, 2001
Semiconductor device having an SOI substrate
TOSHIBA KK195 citations99
US5410169AApr 25, 1995
Dynamic random access memory having bit lines buried in semiconductor substrate
TOSHIBA KK95 citations96
US4951175AAug 21, 1990
Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof
TOSHIBA KK56 citations95
US5142639AAug 25, 1992
Semiconductor memory device having a stacked capacitor cell structure
TOSHIBA KK77 citations94
US5004704AApr 2, 1991
Method for manufacturing a semiconductor device having a phospho silicate glass layer as an interlayer insulating layer
TOSHIBA KK46 citations93
US5726475AMar 10, 1998
Semiconductor device having different impurity concentration wells
TOSHIBA KK29 citations92
US5302844AApr 12, 1994
Semiconductor device and method for manufacturing the same
TOSHIBA KK33 citations92
US5276343AJan 4, 1994
Semiconductor memory device having a bit line constituted by a semiconductor layer
TOSHIBA KK55 citations92
US5194752AMar 16, 1993
Semiconductor memory device
TOSHIBA KK25 citations92
US5110766AMay 5, 1992
Method of manufacturing a semiconductor device including forming a flattening layer over hollows in a contact hole
TOSHIBA KK23 citations92
US5079613AJan 7, 1992
Semiconductor device having different impurity concentration wells
TOSHIBA KK37 citations92
US5041887AAug 20, 1991
Semiconductor memory device
TOSHIBA KK27 citations92
US4916521AApr 10, 1990
Contact portion of semiconductor integrated circuit device
TOSHIBA KK28 citations92
US5210437AMay 11, 1993
MOS device having a well layer for controlling threshold voltage
TOSHIBA KK64 citations91
US6130450AOct 10, 2000
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
TOSHIBA KK15 citations82
US5374838ADec 20, 1994
Semiconductor device having different impurity concentration wells
TOSHIBA KK19 citations82
US5260226ANov 9, 1993
Semiconductor device having different impurity concentration wells
TOSHIBA KK16 citations82
US7187027B2Mar 6, 2007
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
TOSHIBA KK7 citations74
US7023044B2Apr 4, 2006
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
TOSHIBA KK4 citations74
US6551894B1Apr 22, 2003
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
TOSHIBA KK8 citations74
US5238860AAug 24, 1993
Semiconductor device having different impurity concentration wells
TOSHIBA KK19 citations74
US5144388ASep 1, 1992
Semiconductor device having a plurality of fets formed in an element area
TOSHIBA KK18 citations74
US5032528AJul 16, 1991
Method of forming a contact hole in semiconductor integrated circuit
TOSHIBA KK10 citations74
US4833647AMay 23, 1989
Semiconductor memory device having high capacitance and improved radiation immunity
TOSHIBA KK18 citations74
US5324975AJun 28, 1994
Semiconductor memory device
TOSHIBA KK9 citations73
US5302542AApr 12, 1994
Method of making a semiconductor memory device
TOSHIBA KK14 citations73
US5187566AFeb 16, 1993
Semiconductor memory and method of manufacturing the same
TOSHIBA KK15 citations71
US5111275AMay 5, 1992
Multicell semiconductor memory device
TOSHIBA KK2 citations63
US6846733B2Jan 25, 2005
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
TOSHIBA KK0 citations52