Inventor
YOSHIMI MASANORI
JP5 patents
Patents
5 patentsUS5962889AOct 5, 1999
Nonvolatile semiconductor memory with a floating gate that has a bottom surface that is smaller than the upper surface
SHARP KK32 citations92
US6091632AJul 18, 2000
Nonvolatile semiconductor storage device having a plurality of blocks of memory cell transistors formed on respective wells isolated from each other
SHARP KK23 citations91
US5290721AMar 1, 1994
Method of making a stacked semiconductor nonvolatile memory device
SHARP KK15 citations68
US6737344B2May 18, 2004
Method for manufacturing nonvolatile semiconductor memory with narrow variation in threshold voltages of memory cells
SHARP KK4 citations60
US6395619B2May 28, 2002
Process for fabricating a semiconductor device
SHARP KK1 citations50