Inventor
MOSIER II JOHN W
US6 patents
Patents
6 patentsUS5801417ASep 1, 1998
Self-aligned power MOSFET device with recessed gate and source
ADVANCED POWER TECHNOLOGY236 citations97
US5648283AJul 15, 1997
High density power device fabrication process using undercut oxide sidewalls
ADVANCED POWER TECHNOLOGY167 citations97
US5283201AFeb 1, 1994
High density power device fabrication process
ADVANCED POWER TECHNOLOGY248 citations97
US5045903ASep 3, 1991
Topographic pattern delineated power MOSFET with profile tailored recessed source
ADVANCED POWER TECHNOLOGY87 citations95
US5019522AMay 28, 1991
Method of making topographic pattern delineated power MOSFET with profile tailored recessed source
ADVANCED POWER TECHNOLOGY103 citations95
US4895810AJan 23, 1990
Iopographic pattern delineated power mosfet with profile tailored recessed source
ADVANCED POWER TECHNOLOGY112 citations95