Inventor
YEH JACK
TW23 patents
⚠️ This page may combine multiple inventors who share the name “YEH JACK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
20 patentsUS6380583B1Apr 30, 2002
Method to increase coupling ratio of source to floating gate in split-gate flash
TAIWAN SEMICONDUCTOR MFG46 citations96
US6228695B1May 8, 2001
Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate
TAIWAN SEMICONDUCTOR MFG76 citations96
US6159801ADec 12, 2000
Method to increase coupling ratio of source to floating gate in split-gate flash
TAIWAN SEMICONDUCTOR MFG84 citations96
US6355527B1Mar 12, 2002
Method to increase coupling ratio of source to floating gate in split-gate flash
TAIWAN SEMICONDUCTOR MFG28 citations93
US6174772B1Jan 16, 2001
Optimal process flow of fabricating nitride spacer without inter-poly oxide damage in split gate flash
TAIWAN SEMICONDUCTOR MFG16 citations93
US6165845ADec 26, 2000
Method to fabricate poly tip in split-gate flash
TAIWAN SEMICONDUCTOR MFG29 citations93
US6127229AOct 3, 2000
Process of forming an EEPROM device having a split gate
TAIWAN SEMICONDUCTOR MFG36 citations93
US6787418B2Sep 7, 2004
Method of making the selection gate in a split-gate flash eeprom cell and its structure
TAIWAN SEMICONDUCTOR MFG16 citations92
US6403494B1Jun 11, 2002
Method of forming a floating gate self-aligned to STI on EEPROM
TAIWAN SEMICONDUCTOR MFG55 citations92
US6297099B1Oct 2, 2001
Method to free control tunneling oxide thickness on poly tip of flash
TAIWAN SEMICONDUCTOR MFG24 citations92
US6465836B2Oct 15, 2002
Vertical split gate field effect transistor (FET) device
TAIWAN SEMICONDUCTOR MFG40 citations91
US6333228B1Dec 25, 2001
Method to improve the control of bird's beak profile of poly in split gate flash
TAIWAN SEMICONDUCTOR MFG19 citations84
US7514740B2Apr 7, 2009
Logic compatible storage device
TAIWAN SEMICONDUCTOR MFG7 citations74
US7417278B2Aug 26, 2008
Method to increase coupling ratio of source to floating gate in split-gate flash
TAIWAN SEMICONDUCTOR MFG4 citations74
US7001809B2Feb 21, 2006
Method to increase coupling ratio of source to floating gate in split-gate flash
TAIWAN SEMICONDUCTOR MFG7 citations74
US6635922B1Oct 21, 2003
Method to fabricate poly tip in split gate flash
TAIWAN SEMICONDUCTOR MFG11 citations74
US6465841B1Oct 15, 2002
Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage
TAIWAN SEMICONDUCTOR MFG13 citations74
US6067254AMay 23, 2000
Method to avoid program disturb and allow shrinking the cell size in split gate flash memory
TAIWAN SEMICONDUCTOR MFG12 citations74
US6544828B1Apr 8, 2003
Adding a poly-strip on isolation's edge to improve endurance of high voltage NMOS on EEPROM
TAIWAN SEMICONDUCTOR MFG2 citations62
US6902978B2Jun 7, 2005
Method of making the selection gate in a split-gate flash EEPROM cell and its structure
TAIWAN SEMICONDUCTOR MFG0 citations52