Inventor · disambiguated record
Gregory Bidal
Also filed as: BIDAL GREGORY · BIDAL GREGORY F · BIDAL GRÉGORY
9 granted patents·3 pending applications·16 citations·filing 2009–2016
81Inventor score
Files withST MICROELECTRONICS CROLLES 2 SAS5ST MICROELECTRONICS CROLLES 22BIDAL GREGORY1BIDAL GREGORY F1BIDAL GRÉGORY1
Top patents by PatentIndex Score
12 records- 0172US9530686B1MOS transistor and method of manufacturing the sameST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Dec 27, 2016·2 cites·15 claims
- 0269US9786755B2Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Oct 10, 2017·2 cites·5 claims
- 0369US8288754B2Quantum-dot device and position-controlled quantum-dot-fabrication methodBIDAL GREGORY·Filed 2009·Granted Oct 16, 2012·6 cites·12 claims
- 0463US8912067B2Method for manufacturing MOS transistors with different types of gate stacksHUGUENIN JEAN-LUC·Filed 2011·Granted Dec 16, 2014·3 cites·13 claims
- 0558US8394704B2Method for fabricating a dual-orientation group-IV semiconductor substrateBIDAL GREGORY F·Filed 2009·Granted Mar 12, 2013·3 cites·15 claims
- 0650US9117876B2Integrated circuit comprising an isolating trench and corresponding methodST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Aug 25, 2015·0 cites·5 claims
- 0747US9941416B2MOS transistor and method of manufacturing the sameST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Apr 10, 2018·0 cites·14 claims
- 0841US8829622B2Integrated circuit comprising an isolating trench and corresponding methodBIDAL GRÉGORY·Filed 2012·Granted Sep 9, 2014·0 cites·6 claims
- 0937US2013099322A1Method for manufacturing insulated-gate transistorsST MICROELECTRONICS CROLLES 2·Filed 2012·Application pending·0 cites
- 1036US2017317106A1Mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator typeSTMICROELECTRONICS ROUSSET·Filed 2016·Application pending·0 cites
- 1134US9876032B2Method of manufacturing a device with MOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Jan 23, 2018·0 cites·18 claims
- 1230US2016284807A1Method of formation of a substrate of the soi, in particular the fdsoi, type adapted to transistors having gate dielectrics of different thicknesses, corresponding substrate and integrated circuitST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Application pending·0 cites
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