P

Inventor

WU DER-YUAN

TW32 patents
⚠️ This page may combine multiple inventors who share the name “WU DER-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

31 patents
US6432768B1Aug 13, 2002

Method of fabricating memory device and logic device on the same chip

UNITED MICROELECTRONICS CORP23 citations93
US5913129AJun 15, 1999

Method of fabricating a capacitor structure for a dynamic random access memory

UNITED MICROELECTRONICS CORP27 citations93
US6392924B1May 21, 2002

Array for forming magnetoresistive random access memory with pseudo spin valve

UNITED MICROELECTRONICS CORP39 citations92
US6204109B1Mar 20, 2001

Method for forming a cylindrical capacitor

UNITED MICROELECTRONICS CORP22 citations92
US6140201AOct 31, 2000

Method for fabricating a cylinder capacitor

UNITED MICROELECTRONICS CORP26 citations92
US6096642AAug 1, 2000

Method of forming self-aligned silicide in integrated circuit without causing bridging effects

UNITED MICROELECTRONICS CORP34 citations92
US6040231AMar 21, 2000

Method of fabricating a shallow trench isolation structure which includes using a salicide process to form an aslope periphery at the top corner of the substrate

UNITED MICROELECTRONICS CORP31 citations92
US5795805AAug 18, 1998

Fabricating method of dynamic random access memory

UNITED MICROELECTRONICS CORP26 citations92
US5703408ADec 30, 1997

Bonding pad structure and method thereof

UNITED MICROELECTRONICS CORP73 citations91
US6406974B1Jun 18, 2002

Method of forming triple N well utilizing phosphorus and boron ion implantations

UNITED MICROELECTRONICS CORP25 citations89
US6753244B2Jun 22, 2004

Method for manufacturing a copper fuse structure

UNITED MICROELECTRONICS CORP13 citations84
US6281069B1Aug 28, 2001

Method for forming deep trench capacitor under a shallow trench isolation structure

UNITED MICROELECTRONICS CORP19 citations84
US6121085ASep 19, 2000

Method of fabricating contact openings for dynamic random-access memory

UNITED MICROELECTRONICS CORP18 citations84
US6030867AFeb 29, 2000

Method of fabricating a Fin/HSG DRAM cell capacitor

UNITED MICROELECTRONICS CORP16 citations84
US5930623AJul 27, 1999

Method of forming a data storage capacitor with a wide electrode area for dynamic random access memory using double spacers

UNITED MICROELECTRONICS CORP17 citations84
US5739046AApr 14, 1998

Method of making a reliable barrier layer

UNITED MICROELECTRONICS CORP17 citations82
US6261898B1Jul 17, 2001

Method for fabricating a salicide gate

UNITED MICROELECTRONICS CORP13 citations74
US6103606AAug 15, 2000

Method of fabricating a word line

UNITED MICROELECTRONICS CORP8 citations74
US5854106ADec 29, 1998

Method of forming a data storage capacitor with a wide electrode area for dynamic random access memory

UNITED MICROELECTRONICS CORP11 citations74
US5599746AFeb 4, 1997

Method to eliminate polycide peeling at wafer edge using extended scribe lines

UNITED MICROELECTRONICS CORP12 citations74
US6746883B2Jun 8, 2004

Direct determination of interface traps in MOS devices

UNITED MICROELECTRONICS CORP7 citations72
US6833318B2Dec 21, 2004

Gap-filling process

UNITED MICROELECTRONICS CORP8 citations69
US6004845ADec 21, 1999

Method for fabricating a crown-shaped capacitor

UNITED MICROELECTRONICS CORP4 citations63
US5937307AAug 10, 1999

Process for fabricating DRAM capacitor

UNITED MICROELECTRONICS CORP6 citations63
US6110827AAug 29, 2000

Planarization method for self-aligned contact process

UNITED MICROELECTRONICS CORP2 citations62
US6080666AJun 27, 2000

Method for increasing landing pad area

UNITED MICROELECTRONICS CORP4 citations62
US5668393ASep 16, 1997

Locos technology with reduced junction leakage

UNITED MICROELECTRONICS CORP3 citations62
US6017799AJan 25, 2000

Method of fabricating dynamic random memory

UNITED MICROELECTRONICS CORP4 citations59
US6667534B1Dec 23, 2003

Copper fuse structure and method for manufacturing the same

UNITED MICROELECTRONICS CORP1 citations52
US6124166ASep 26, 2000

Method of forming a lower electrode of a capacitor in a DRAM cell

UNITED MICROELECTRONICS CORP1 citations52
US6051507AApr 18, 2000

Method of fabricating capacitor with high capacitance

UNITED MICROELECTRONICS CORP0 citations41

(unassigned)

1 patent