Inventor

LUAN HONGFA

US21 patents

⚠️ This page may combine multiple inventors who share the name “LUAN HONGFA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LUAN HONGFA

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of forming a semiconductor device by high-pressure anneal and post-anneal treatment

Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer

Semiconductor device having hydrogen in a dielectric layer

Semiconductor device having hydrogen in a dielectric layer

Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer

Semiconductor device manufacturing methods and methods of forming insulating material layers

Semiconductor film with adhesion layer and method for forming the same

Semiconductor film with adhesion layer and method for forming the same

INFINEON TECHNOLOGIES AG

Transistors and methods of manufacture thereof

Transistor device and method of manufacture thereof

Transistor device and methods of manufacture thereof

NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric

Semiconductor devices and methods of manufacture thereof

Transistor device and methods of manufacture thereof

TAIWAN SEMICONDUCTOR MFG

Semiconductor devices and methods of manufacture thereof

Semiconductor devices comprising a fin

Semiconductor film with adhesion layer and method for forming the same

SCHULZ THOMAS

Semiconductor devices and methods of manufacture thereof

Semiconductor devices and methods of manufacture thereof

HUANG GIN-CHEN

Semiconductor device manufacturing methods and methods of forming insulating material layers

LUAN HONGFA

Transistor device and methods of manufacture thereof